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Cited article:

Méthode générale de modélisation du transistor à effet de champ à hétérojonction

P. Godts, D. Depreeuw, E. Constant, J. Zimmermann

Rev. Phys. Appl. (Paris), 24 2 (1989) 151-170

DOI: https://doi.org/10.1051/rphysap:01989002402015100

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Optimisation théorique et expérimentale des caractéristiques géométriques et électriques du transistor à effet de champ à grille submicronique

Jacques Vanbremeersch, Pascale Godts, Eugène Constant and Isabelle Valin
Annales des Télécommunications 45 (5-6) 321 (1990)
DOI: 10.1007/BF02995133
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A new expression of Ns versus Efto an accurate control charge model for AlGaAs/GaAs

I Bouneb and F. Kerrour
IOP Conference Series: Materials Science and Engineering 108 012045 (2016)
DOI: 10.1088/1757-899X/108/1/012045
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