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Cited article:

Méthode générale de modélisation du transistor à effet de champ à hétérojonction

P. Godts, D. Depreeuw, E. Constant, J. Zimmermann

Rev. Phys. Appl. (Paris), 24 2 (1989) 151-170

DOI: https://doi.org/10.1051/rphysap:01989002402015100

This article has been cited by the following article(s):

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Optimisation théorique et expérimentale des caractéristiques géométriques et électriques du transistor à effet de champ à grille submicronique

Jacques Vanbremeersch, Pascale Godts, Eugène Constant and Isabelle Valin
Annales des Télécommunications 45 (5-6) 321 (1990)
https://doi.org/10.1007/BF02995133