Revue de Physique Appliquée

Modelling of Hfe avalanche degradation in gate controlled bipolar transistors

Ph. Roux, J.P. Dom, Ph. Cazenave and P. Nouel

Rev. Phys. Appl. (Paris), 13 12 (1978) 597-601

DOI: 10.1051/rphysap:019780013012059700

Ph. Roux

J.P. Dom

Ph. Cazenave

P. Nouel

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