Revue de Physique Appliquée

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A complete dry etching process for MOS FET's with submicron gate length

P. Parrens, E. Raffat and P. Jeuch

Rev. Phys. Appl. (Paris), 17 6 (1982) 383-388

DOI: 10.1051/rphysap:01982001706038300

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