Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15 S. Rolland, A. Lasbley, A. Seyni, R. Granger and R. Triboulet Rev. Phys. Appl. (Paris), 24 8 (1989) 795-802 DOI: 10.1051/rphysap:01989002408079500