Revue de Physique Appliquée

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Nouvelle méthode de profilométrie capacitive des porteurs libres et des centres profonds dans les semiconducteurs

B. Remaki and B. Balland

Rev. Phys. Appl. (Paris), 22 11 (1987) 1381-1388

DOI: 10.1051/rphysap:0198700220110138100

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