Rev. Phys. Appl. (Paris) 12, 235-237 (1977)
DOI: 10.1051/rphysap:01977001202023500

Interaction of defects in CdTe-crystals heavily doped with chlorine

N.V. Agrinskaya et O.A. Matveev

A. F. Ioffe Physical-Technical Institute, Leningrad, U. S. S. R.

Abstract
In crystals with chlorine concentrations between 1 × 1017 cm -3 and 2 x 1018 cm-3 a high degree of association is found after vacuum annealing at 850 °C and quenching. Electrical measurements and photoluminescence data along with isothermal anneals for varying times at 600 °C are presented which suggest that not only single and double associates [(VCdClTe) and (VCd 2 Cl Te)] form, but larger clusters as well. Thus, the compensation process in Cl doped CdTe appears to be more complex than thought previously.

Résumé
On a constaté que les cristaux de tellurure de cadmium dopés au chlore à des concentrations comprises entre 1017 et 5 × 1018 cm-3 présentent un degré d'association élevé lorsqu'ils ont été recuits à 850 °C puis trempés. Des mesures électriques et de luminescence, effectuées sur ces échantillons, après des recuits à 600 °C pendant des temps croissants, suggèrent qu'en dehors des associations simples et doubles VCdClTe et V Cd 2 ClTe des groupements plus larges peuvent se former.

PACS
6170B - Interstitials and vacancies.
6170R - Crystal impurities: general.
6170Y - Interaction between different crystal structure defects.
7220F - Low field transport and mobility: piezoresistance semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7855D - Photoluminescence in tetrahedrally bonded nonmetals.

Key words
cadmium compounds -- carrier density -- chlorine -- Fermi level -- heavily doped semiconductors -- II VI semiconductors -- impurity vacancy interactions -- luminescence of inorganic solids -- photoluminescence -- vacuum annealing -- photoluminescence -- compensation -- impurity association -- clusters -- heavily doped CdTe:Cl -- II VI semiconductor -- defect interactions -- carrier concentration -- fermi level