| Numéro |
Rev. Phys. Appl. (Paris)
Volume 16, Numéro 2, février 1981
|
|
|---|---|---|
| Page(s) | 35 - 36 | |
| DOI | https://doi.org/10.1051/rphysap:0198100160203500 | |
Rev. Phys. Appl. (Paris) 16, 35-36 (1981)
DOI: 10.1051/rphysap:0198100160203500
Department of Physics and Postgraduate Science Center, University of Alexandria, Alexandria, Egypt
7240 - Photoconduction and photovoltaic effects: photodielectric effects.
7280C - Electrical conductivity of elemental semiconductors.
7280N - Electrical conductivity of amorphous and glassy semiconductors.
7330 - Surface double layers, Schottky barriers, and work functions.
7340L - Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctions.
2520C - Elemental semiconductors.
2520F - Amorphous and glassy semiconductors.
2530B - Semiconductor junctions.
Key words
amorphous semiconductors -- elemental semiconductors -- p n homojunctions -- photovoltaic effects -- Schottky effect -- silicon -- electrical measurements -- Schottky barriers -- Mott Schottky dispersion -- amorphous Si heterojunction -- crystalline Si heterojunction -- spectral measurements
DOI: 10.1051/rphysap:0198100160203500
On the amorphous silicon on crystalline silicon heterojunctions
M. El-Raey et A. Abou-AlyDepartment of Physics and Postgraduate Science Center, University of Alexandria, Alexandria, Egypt
Abstract
Accurate analysis and reinterpretation of recent results of a-Si heterojunctions have removed inconsistency of spectral and electrical measurements. Results of Schottky barriers and Mott-Schottky dispersion are discussed.
Résumé
Une analyse précise et une meilleure interprétation de résultats récents sur les hétérojonctions a-Si donnent une consistance nouvelle aux mesures électriques et spectrales. Les résultats obtenus sur des barrières Schottky et la dispersion Mott-Schottky sont discutés.
7240 - Photoconduction and photovoltaic effects: photodielectric effects.
7280C - Electrical conductivity of elemental semiconductors.
7280N - Electrical conductivity of amorphous and glassy semiconductors.
7330 - Surface double layers, Schottky barriers, and work functions.
7340L - Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctions.
2520C - Elemental semiconductors.
2520F - Amorphous and glassy semiconductors.
2530B - Semiconductor junctions.
Key words
amorphous semiconductors -- elemental semiconductors -- p n homojunctions -- photovoltaic effects -- Schottky effect -- silicon -- electrical measurements -- Schottky barriers -- Mott Schottky dispersion -- amorphous Si heterojunction -- crystalline Si heterojunction -- spectral measurements