| Numéro |
Rev. Phys. Appl. (Paris)
Volume 22, Numéro 1, janvier 1987
|
|
|---|---|---|
| Page(s) | 15 - 19 | |
| DOI | https://doi.org/10.1051/rphysap:0198700220101500 | |
Rev. Phys. Appl. (Paris) 22, 15-19 (1987)
DOI: 10.1051/rphysap:0198700220101500
Central Research Lab., Hitachi Ltd, Kokubunji, Tokyo 185, Japan
1210 - Power electronics, supply and supervisory circuits.
1265D - Memory circuits.
5150 - Other circuits for digital computers.
Key words
power supply circuits -- random access storage -- megabit DRAM power supply -- power dissipation -- reliability -- memory cell operating margin -- CMOS -- vertically structured memory cells -- 5 V -- 1 MByte -- 16 MByte
DOI: 10.1051/rphysap:0198700220101500
Power supply constraints in megabit DRAMs of the future
K. Itoh et K. KimuraCentral Research Lab., Hitachi Ltd, Kokubunji, Tokyo 185, Japan
Abstract
Megabit DRAM power supply is described in terms of power dissipation, reliability for small transistors, and memory cell operating margin. Such recently developed 1 Mb techniques as CMOS and vertically structured memory cells are discussed. It is concluded that, in spite of CMOS advantage, a transition from the existing supply voltage of 5 V might occur at the 16 Mb level.
Résumé
La densité des mémoires DRAM a été multipliée par quatre tous les trois ans. Le développement des mémoires 1 Mb est d'ores et déjà très avancé. L'évolution de l'alimentation est donc d'importance capitale étant donné les réductions des dimensions qui sont intervenues.
1210 - Power electronics, supply and supervisory circuits.
1265D - Memory circuits.
5150 - Other circuits for digital computers.
Key words
power supply circuits -- random access storage -- megabit DRAM power supply -- power dissipation -- reliability -- memory cell operating margin -- CMOS -- vertically structured memory cells -- 5 V -- 1 MByte -- 16 MByte