| Numéro |
Rev. Phys. Appl. (Paris)
Volume 23, Numéro 4, avril 1988
|
|
|---|---|---|
| Page(s) | 680 - 680 | |
| DOI | https://doi.org/10.1051/rphysap:01988002304068000 | |
Rev. Phys. Appl. (Paris) 23, 680-680 (1988)
DOI: 10.1051/rphysap:01988002304068000
Département de Recherche Fondamentale, Service de Physique/Groupe Structures, Centre d'Etudes Nucléaires, 85 X, 38041 Grenoble Cedex, France
PACS
6170J - Etch pits, decoration, transmission electron microscopy and other direct observations of dislocations.
6170N - Grain and twin boundaries.
6170Y - Interaction between different crystal structure defects.
6220F - Deformation and plasticity.
Key words
electron microscope examination of materials -- elemental semiconductors -- silicon -- semiconductor -- HREM -- dislocations -- grain boundaries -- plastic deformation -- Si
DOI: 10.1051/rphysap:01988002304068000
Deformation of a Σ= 9 (122) gb in silicon studied by HREM
M. Elkajbaji et J. Thibault-DesseauxDépartement de Recherche Fondamentale, Service de Physique/Groupe Structures, Centre d'Etudes Nucléaires, 85 X, 38041 Grenoble Cedex, France
Without abstract
PACS
6170J - Etch pits, decoration, transmission electron microscopy and other direct observations of dislocations.
6170N - Grain and twin boundaries.
6170Y - Interaction between different crystal structure defects.
6220F - Deformation and plasticity.
Key words
electron microscope examination of materials -- elemental semiconductors -- silicon -- semiconductor -- HREM -- dislocations -- grain boundaries -- plastic deformation -- Si
Première page de l'article
