| Numéro |
Rev. Phys. Appl. (Paris)
Volume 15, Numéro 1, janvier 1980
|
|
|---|---|---|
| Page(s) | 25 - 31 | |
| DOI | https://doi.org/10.1051/rphysap:0198000150102500 | |
References of Rev. Phys. Appl. (Paris) 15 25-31
- Collins, C.B., Carlson, R.D., Gallagher, C.J., Phys. Rev. 105 (1957) 1168. [CrossRef]
- Carchano, H., Jundt, C., Solid State Electron. 13 (1970) 83. [CrossRef]
- Akhmedova, M.M., Lebedev, A.A., Makhkamov, Sh., Sov. Phys. Semicond. 9 (1976) 861.
- Sah, C.T., Tasch, A.F. Jr., Schroder, D.K., Phys. Rev. Lett. 19 (1967) 71. [CrossRef]
- Miller, M.D., Schade, H., Nuese, C.J., J. Appl. Phys. 47 (1976) 2569. [CrossRef]
- Yau, L.D., Sah, C.T., Appl. Phys. Lett. 21 (1972) 157. [CrossRef]
- Engström, O., Grimmeiss, H.G., J. Appl. Phys. 46 (1975) 831. [CrossRef]
- Lisiak, K.P., Milnes, A.G., J. Appl. Phys. 46 (1975) 5229. [CrossRef]
- Pals, J.A., Solid State Electron. 17 (1974) 1139. [CrossRef]
- Woodbury, H.H., Ludwig, G.W., Phys. Rev. 126 (1962) 466. [CrossRef]
- Glinchuk, K.D., Litovchenko, N.M., Sov. Phys. Solid State 6 (1965) 2963.
- Braun, S., Grimmeiss, H.G., J. Appl. Phys. 48 (1977) 3883. [CrossRef]
- Brotherton, S.D., Bicknell, J., J. Appl. Phys. 49 (1978) 667. [CrossRef]
- Zohta, Y., J. Appl. Phys. 43 (1972) 1713. [CrossRef]
- Brunwin, R., Hamilton, B., Jordan, P., Peaker, A.R., 2e Lundt International Conference on deep level impurities in semi-conductors 7 (Sainte Maxime, France), 10 mai 1979.
- Bullis, W.M., Strieter, F.J., J. Appl. Phys. 39 (1968) 672.
- Ralph, H.I., J. Appl. Phys. 49 (1978) 672. [CrossRef]
- Sah, C.T., Forbes, L., Rosier, L.T., Tasch, A.E., Tole, A.B., Appl. Phys. Lett. 15 (1969) 145. [CrossRef]
- Sah, C.T., I.E.E.E. Trans. Electron Devices 24 n° 4 (April 1977).
- Evwaraye, A.O., Sun, E., J. Appl. Phys. 47 (1976) 3172. [CrossRef]
- Milnes, A.G., Deep Impurities in Semiconductors (John Wiley and Sons) 1973.