EDP Sciences logo
Authentification abonné
Rechercher
Menu

Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Determination of stoichiometry deviation in wide-band II–VI semiconductors on the basis of equilibrium vapor phase composition

Svetlana P. Kobeleva
Modern Electronic Materials 8 (2) 59 (2022)
https://doi.org/10.3897/j.moem.8.2.90174

Determination of stoichiometry deviation in wide-band II-VI semiconductors on the basis of equilibrium vapor phase composition

S. P. Kobeleva
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 25 (2) 107 (2022)
https://doi.org/10.17073/1609-3577-2022-2-107-114

Dielectric Properties of Graded and Non-Graded InGaN/GaN MQWs

Ahmet Kursat BILGILI, Mustafa OZTURK, Süleyman ÖZÇELİK and Adem TATAROGLU
Karadeniz Fen Bilimleri Dergisi 11 (1) 214 (2021)
https://doi.org/10.31466/kfbd.841375

Size- and Surface-Dependent Solubility of Cadmium Telluride in Aqueous Solutions

Renate Zapf-Gottwick, Matthias Zorn, Jessica Nover, Michael Koch, Carolin Feifel and Jürgen H. Werner
Energies 14 (2) 398 (2021)
https://doi.org/10.3390/en14020398

Extension of Meyer-Neldel rule using chemical diffusion experiments in CdTe

Lukáš Šedivý, Eduard Belas, Roman Grill, Artem Musiienko and Igor Vasylchenko
Journal of Alloys and Compounds 788 897 (2019)
https://doi.org/10.1016/j.jallcom.2019.02.036

Review on first-principles study of defect properties of CdTe as a solar cell absorber

Ji-Hui Yang, Wan-Jian Yin, Ji-Sang Park, Jie Ma and Su-Huai Wei
Semiconductor Science and Technology 31 (8) 083002 (2016)
https://doi.org/10.1088/0268-1242/31/8/083002

First-principles study of roles of Cu and Cl in polycrystalline CdTe

Ji-Hui Yang, Wan-Jian Yin, Ji-Sang Park, Wyatt Metzger and Su-Huai Wei
Journal of Applied Physics 119 (4) (2016)
https://doi.org/10.1063/1.4940722

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

L. Shcherbak, O. Kopach, P. Fochuk, A. E. Bolotnikov and R. B. James
Journal of Phase Equilibria and Diffusion 36 (2) 99 (2015)
https://doi.org/10.1007/s11669-015-0364-8

Direct evidence of enhanced chlorine segregation at grain boundaries in polycrystalline CdTe thin films via three‐dimensional TOF‐SIMS imaging

Steven P. Harvey, Glenn Teeter, Helio Moutinho and Mowafak M. Al‐Jassim
Progress in Photovoltaics: Research and Applications 23 (7) 838 (2015)
https://doi.org/10.1002/pip.2498

Search for the Major Chlorine-Related Defects in CdTe:Cl

Dmitry Krasikov, Andrey Knizhnik, Boris Potapkin and Timothy Sommerer
MRS Proceedings 1638 (2014)
https://doi.org/10.1557/opl.2014.148

Tailoring of defect levels by deformations: Te-antisite in CdTe

A Shepidchenko, S Mirbt, B Sanyal, A Håkansson and M Klintenberg
Journal of Physics: Condensed Matter 25 (41) 415801 (2013)
https://doi.org/10.1088/0953-8984/25/41/415801

Study of the effect of the stress on CdTe nuclear detectors

M. Ayoub, M. Hage-Ali, I. Radley and J. T. Mullins
Journal of Applied Physics 114 (10) (2013)
https://doi.org/10.1063/1.4820926

A comprehensive picture of Cu doping in CdTe solar cells

J. Perrenoud, L. Kranz, C. Gretener, et al.
Journal of Applied Physics 114 (17) (2013)
https://doi.org/10.1063/1.4828484

Ion-beam-induced damage formation in CdTe

C. W. Rischau, C. S. Schnohr, E. Wendler and W. Wesch
Journal of Applied Physics 109 (11) (2011)
https://doi.org/10.1063/1.3592265

CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications

O. Panchuk and P. Fochuk
CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications 309 (2010)
https://doi.org/10.1016/B978-0-08-046409-1.00006-X

Growth and annealing of CdZnTe:Cl crystals with different content of Zn for nuclear detectors

N. K. Zelenina, V. P. Karpenko, O. A. Matveev, et al.
Semiconductors 43 (10) 1379 (2009)
https://doi.org/10.1134/S1063782609100224

Conductivity compensation in CdZnTe: Cl crystals with variable zinc content

O. A. Matveev, N. K. Zelenina, A. I. Terent’ev, A. A. Tomasov and V. N. Gus’kov
Technical Physics Letters 33 (4) 358 (2007)
https://doi.org/10.1134/S1063785007040268

Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration

J. Franc, H. Elhadidy, V. Babentsov, A. Fauler and M. Fiederle
Journal of Materials Research 21 (4) 1025 (2006)
https://doi.org/10.1557/jmr.2006.0117

Annealing effects on defect levels of CdTe:Cl materials and the uniformity of the electrical properties

M. Ayoub, M. Hage-Ali, J.M. Koebel, A. Zumbiehl, F. Klotz, C. Rit, R. Regal, P. Fougeres and P. Siffert
IEEE Transactions on Nuclear Science 50 (2) 229 (2003)
https://doi.org/10.1109/TNS.2003.809981

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

M. Fiederle, V. Babentsov, J. Franc, A. Fauler and J.‐P. Konrath
Crystal Research and Technology 38 (7-8) 588 (2003)
https://doi.org/10.1002/crat.200310072

Preparation and photoluminescence characterization of high-purity CdTe single crystals: purification effect of normal freezing on tellurium and cadmium telluride

S.H Song, J Wang and M Isshiki
Journal of Crystal Growth 236 (1-3) 165 (2002)
https://doi.org/10.1016/S0022-0248(01)02395-8

Mechanism of the High X-ray Sensitivity of Single-Crystal CdTe Detectors

P. N. Tkachuk, A. N. Raranskii, Ya. M. Struk and V. I. Tkachuk
Inorganic Materials 38 (10) 998 (2002)
https://doi.org/10.1023/A:1020564902389

Optical and photoelectric properties of vanadium-doped Cd1$minus$xHgxTe crystals

Yu P Gnatenko, I O Faryna, P M Bukivskij, et al.
Journal of Physics: Condensed Matter 14 (29) 7027 (2002)
https://doi.org/10.1088/0953-8984/14/29/304

Defect engineering in CdTe, based on the total energies of elementary defects

V Babentsov, V Corregidor, K Benz, et al.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 458 (1-2) 85 (2001)
https://doi.org/10.1016/S0168-9002(00)00924-4

CdTe and Cd1−xZnxTe for nuclear detectors: facts and fictions

P. Fougeres, P. Siffert, M. Hageali, J.M. Koebel and R. Regal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 428 (1) 38 (1999)
https://doi.org/10.1016/S0168-9002(98)01578-2

Deep impurity states and intrinsic defects in photorefractive Cd1−x FexTe crystals

Yu. P. Gnatenko, R. V. Gamernik, I. A. Farina and P. I. Babii
Physics of the Solid State 40 (7) 1107 (1998)
https://doi.org/10.1134/1.1130498

CdTe I: Solidus curve and composition-temperature-tellurium partial pressure data for Te-rich CdTe(s) from optical density measurements

Rei Fang and R.F. Brebrick
Journal of Physics and Chemistry of Solids 57 (4) 443 (1996)
https://doi.org/10.1016/0022-3697(95)00251-0

Semiconductors for Room Temperature Nuclear Detector Applications

Makram Hage-Ali and Paul Siffert
Semiconductors and Semimetals, Semiconductors for Room Temperature Nuclear Detector Applications 43 219 (1995)
https://doi.org/10.1016/S0080-8784(08)62745-3

Reversible changes of properties of pure CdTe by annealing and aging

A V Kvit, Yu V Klevkov, S R Oktyabrsky and B G Zhurkin
Semiconductor Science and Technology 9 (10) 1805 (1994)
https://doi.org/10.1088/0268-1242/9/10/009

Defects and electrical properties of doped and undoped CdTe single crystals from tellurium-rich solutions

E. Weigel, G. Müller-Vogt, B. Steinbach, et al.
Materials Science and Engineering: B 16 (1-3) 17 (1993)
https://doi.org/10.1016/0921-5107(93)90006-9

In situ transmission electron microscopy study of dislocation loops induced by P implantation in CdTe single crystals

G. Leo and M.-O. Ruault
Journal of Applied Physics 73 (5) 2234 (1993)
https://doi.org/10.1063/1.353127

A novel method of crystal growth by physical vapour transport and its application to CdTe

K. Grasza, U. Zuzga-Grasza, A. Jȩdrzejzak, et al.
Journal of Crystal Growth 123 (3-4) 519 (1992)
https://doi.org/10.1016/0022-0248(92)90613-N

Defect equilibrium in semi-insulating CdTe(Cl)

P. Höschl, P. Moravec, J. Franc, E. Belas and R. Grill
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 322 (3) 371 (1992)
https://doi.org/10.1016/0168-9002(92)91200-S

The effects of CdCl2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells

S. A. Ringel, A. W. Smith, M. H. MacDougal and A. Rohatgi
Journal of Applied Physics 70 (2) 881 (1991)
https://doi.org/10.1063/1.349652

Studies on Phosphorus-Implantation and the Annealing of Cadmium Telluride and Copper Indium Disulfide

Y. J. Hsu, H. L. Hwang and H. Y. Ueng
MRS Proceedings 147 (1989)
https://doi.org/10.1557/PROC-147-351

Electron paramagnetic resonance study on annealing of phosphorus-implanted cadmium telluride

Y. J. Hsu and H. L Hwang
Journal of Applied Physics 65 (11) 4212 (1989)
https://doi.org/10.1063/1.343302

Evolution of resistivity along Cl-compensated THM grown cadmium telluride crystals

B. Biglari, M. Samimi, J. M. Koebel, M. Hage-Ali and P. Siffert
Physica Status Solidi (a) 100 (2) 589 (1987)
https://doi.org/10.1002/pssa.2211000225

About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride

M. Samimi, B. Biglari, M. Hage-Ali, J. M. Koebel and P. Siffert
Physica Status Solidi (a) 100 (1) 251 (1987)
https://doi.org/10.1002/pssa.2211000129

Fermi Level Pinning in the Middle of the Band Gap in CdTe:Cl Crystals‐Role of Deep Localized States

N. V. Agrinskay and E. N. Arkadeva
physica status solidi (b) 143 (2) (1987)
https://doi.org/10.1002/pssb.2221430244

The electronic characteristics of n-type CdIn2Te4

S. S. Ou, S. A. Eshraghi, O. M. Stafsudd and A. L. Gentile
Journal of Applied Physics 57 (2) 355 (1985)
https://doi.org/10.1063/1.334814

Electrical properties of CdTe films and junctions

Thomas C. Anthony, Alan L. Fahrenbruch, Michael G. Peters and Richard H. Bube
Journal of Applied Physics 57 (2) 400 (1985)
https://doi.org/10.1063/1.334764

Hole traps in p-type electrochemically deposited CdTe thin films

S. S. Ou, A. Bindal, O. M. Stafsudd, K. L. Wang and B. M. Basol
Journal of Applied Physics 55 (4) 1020 (1984)
https://doi.org/10.1063/1.333194

Crystal growth and characterisation of cadmium telluride: A modified solvent evaporation technique

J.B. Mullin, C.A. Jones, B.W. Straughan and A. Royle
Journal of Crystal Growth 59 (1-2) 135 (1982)
https://doi.org/10.1016/0022-0248(82)90314-1

Characterization and annealing behavior of deep levels in CdTe epitaxial layers

H. Sitter, H. Heinrich, K. Lischka and A.- Lopez-Otero
Journal of Applied Physics 53 (7) 4948 (1982)
https://doi.org/10.1063/1.331330

The segregation of impurities and the self-compensation problem in II-VI compounds

J. L. Pautrat, N. Magnea and J. P. Faurie
Journal of Applied Physics 53 (12) 8668 (1982)
https://doi.org/10.1063/1.330464

Effects of Cd‐vapor and Te‐vapor heat treatments on the luminescence of solution‐grown CdTe:In

C. B. Norris and K. R. Zanio
Journal of Applied Physics 53 (9) 6347 (1982)
https://doi.org/10.1063/1.331504

Characterization of germanium-doped CdTe crystals

C. Scharager, P. Siefert, P. Höschl, P. Moravec and M. Vaněček
Physica Status Solidi (a) 66 (1) 87 (1981)
https://doi.org/10.1002/pssa.2210660108

Interdiffusion in doped and undoped semiconductor alloys HgwCd1−wTe

V. Leute, H. M. Schmidtke, W. Stratmann and W. Winking
Physica Status Solidi (a) 67 (1) 183 (1981)
https://doi.org/10.1002/pssa.2210670118