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Relaxation processes in CdTelangleClrangle crystals

A V Savitsky, O A Parfenyuk, M I Ilashchuk, P M Fochouk and N D Korbutyak
Semiconductor Science and Technology 15 (3) 263 (2000)
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Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals

O. A. Matveev and A. I. Terent’ev
Semiconductors 34 (11) 1264 (2000)
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Self-compensation in CdTe〈Cl〉 in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor

O. A. Matveev and A. I. Terent’ev
Semiconductors 32 (2) 144 (1998)
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Semiconductors and Semimetals, Semiconductors for Room Temperature Nuclear Detector Applications 43 219 (1995)
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A novel method of crystal growth by physical vapour transport and its application to CdTe

K. Grasza, U. Zuzga-Grasza, A. Jȩdrzejzak, et al.
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The effects of CdCl2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells

S. A. Ringel, A. W. Smith, M. H. MacDougal and A. Rohatgi
Journal of Applied Physics 70 (2) 881 (1991)
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On the close compensation mechanism in CdTe(Li, Cl) crystals

N.V. Agrinskaya and O.A. Matveev
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 283 (2) 263 (1989)
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