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Cited article:

Contactless defects detection using modulated photoluminescence technique: model for a single Shockley-Read-Hall trap in a semiconductor thin layer

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Relationship between structure, segregation and electrical activity in grain boundaries

A. Lamzatouar, O. Palais, O. B. M. Hardouin Duparc, J. Thibault and A. Charaï
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Mapping of minority carrier lifetime and mobility in imperfect silicon wafers

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Lateral scanning of Si based systems by measurements of the microwave photoconductance

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Microwave photoconductivity techniques for the characterization of semiconductors

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Materials Science and Engineering: B 91-92 224 (2002)
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https://doi.org/10.1016/S1369-8001(00)00162-1

Contactless mapping of lifetime and diffusion length scan map of minority carriers in silicon wafers

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The European Physical Journal Applied Physics 10 (2) 157 (2000)
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Minority carrier lifetime scan map in crystalline silicon wafers

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Review of Scientific Instruments 70 (10) 4044 (1999)
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Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation

A. Schönecker, J. A. Eikelboom, A. R. Burgers, P. Lölgen, C. Leguijt and W. C. Sinke
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Microwave detection of minority carriers in solar cell silicon wafers

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Solar Energy Materials and Solar Cells 36 (2) 169 (1995)
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