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Article cité :
M. Boulou , G. Jacob , D. Bois
Rev. Phys. Appl. (Paris), 13 11 (1978) 555-563
Citations de cet article :
12 articles
Luminescence properties of defects in GaN
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Progress and prospects of group-III nitride semiconductors
S.N Mohammad and H Morkoç Progress in Quantum Electronics 20 (5-6) 361 (1996) https://doi.org/10.1016/S0079-6727(96)00002-X
Study of Zn-associated levels in GaN
M Rezaul Huque Khan, N Sawaki and I Akasaki Semiconductor Science and Technology 7 (4) 472 (1992) https://doi.org/10.1088/0268-1242/7/4/006
N vacancies in AlxGa1−xN
David W. Jenkins, John D. Dow and Min-Hsiung Tsai Journal of Applied Physics 72 (9) 4130 (1992) https://doi.org/10.1063/1.352220
Behaviour of Zn as dopant in the photoluminescence of AlxGa1-xN
Mohammad Rezaul Huque Khan, Yasuo Koide, Nobuhiko Sawaki and Isamu Akasaki Solid State Communications 57 (1) 17 (1986) https://doi.org/10.1016/0038-1098(86)90662-9
Effect of Si on photoluminescence of GaN
Mohammad Rezaul Huque Khan, Yoshio Ohshita, Nobuhiko Sawaki and Isamu Akasaki Solid State Communications 57 (6) 405 (1986) https://doi.org/10.1016/0038-1098(86)90479-5
Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditions
B. Monemar, O. Lagerstedt and H. P. Gislason Journal of Applied Physics 51 (1) 625 (1980) https://doi.org/10.1063/1.327318
Properties of Zn-doped VPE-grown GaN. II. Optical cross sections
B. Monemar, H. P. Gislason and O. Lagerstedt Journal of Applied Physics 51 (1) 640 (1980) https://doi.org/10.1063/1.327319
Recombination mechanisms in GaN:Zn
Michel Boulou, Mario Furtado, Guy Jacob and Daniel Bois Journal of Luminescence 18-19 767 (1979) https://doi.org/10.1016/0022-2313(79)90232-1