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Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

Ikuo Kurachi and Kentaro Yoshioka
Japanese Journal of Applied Physics 53 (3) 036504 (2014)
https://doi.org/10.7567/JJAP.53.036504

Transient enhanced diffusion of boron in Si

S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander and H. E. Maes
Journal of Applied Physics 91 (11) 8919 (2002)
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Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

Landolt-Börnstein - Group III Condensed Matter, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements 41A2a 1 (2002)
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Diffusion in Semiconductors

H. Bracht and N. A. Stolwijk
Landolt-Börnstein - Group III Condensed Matter, Diffusion in Semiconductors 33A 12 (1998)
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Kenji Nishi and Dimitri A. Antoniadis
Journal of Applied Physics 56 (12) 3428 (1984)
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The effects of processing conditions on the out-diffusion of oxygen from Czochralski silicon

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C. L. Claeys, G. J. Declerck and R. J. Van Overstraeten
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Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon

Ulrich Gösele and Werner Frank
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