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Article cité :
G. Pananakakis , G. Kamarinos , P. Viktorovitch
Rev. Phys. Appl. (Paris), 14 5 (1979) 639-647
Citations de cet article :
16 articles
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Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements
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Electronic properties of Al-SiO2-(n or p) Si MIS tunnel diodes
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MIS grating solar cells with noninverting antireflection coatings
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Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels
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Electrical characterization of Al-SiO2-Si (N-type) tunnel structures. Influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface
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Review of conductor-insulator-semiconductor (CIS) solar cells
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Insulating Films on Semiconductors
Georges Pananakakis, Georges Kamarinos and Vincent Goascoz Insulating Films on Semiconductors 78 (1981) https://doi.org/10.1007/978-3-642-68247-6_12
Photovoltaic Solar Energy Conference
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Tunneling solar cell under concentrated light illumination
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Photovoltaic response of alumina M-I-S Schottky structures
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