Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

High frequency capacitance behavior of metal-oxide-semiconductor tunnel structures

Vassiliki Bredimas
Journal of Applied Physics 75 (12) 7922 (1994)
https://doi.org/10.1063/1.356579

Simulation of current-voltage characteristics of Ti-W/nSi Schottky diodes using defects parameters extracted from deep level transient spectroscopy

D. Bauza and G. Pananakakis
Journal of Applied Physics 69 (5) 3357 (1991)
https://doi.org/10.1063/1.348532

Numerical simulation of the current-voltage characteristics of MIS tunnel devices

Yongwei Xia, Georges Pananakakis and Georges Kamarinos
Journal of Computational Physics 91 (2) 478 (1990)
https://doi.org/10.1016/0021-9991(90)90049-7

Effects of interfacial states on the capacitance-voltage characteristics of Pd/SiO2/n-Si Schottky diodes

P.E. Bagnoli and A. Nannini
Solid-State Electronics 30 (10) 1005 (1987)
https://doi.org/10.1016/0038-1101(87)90091-8

Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements

G. Pananakakis and G. Kamarinos
Surface Science 168 (1-3) 657 (1986)
https://doi.org/10.1016/0039-6028(86)90897-6

Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels

M. El-Sayed, G. Pananakakis and G. Kamarinos
Solid-State Electronics 28 (4) 345 (1985)
https://doi.org/10.1016/0038-1101(85)90095-4

Electrical characterization of Al-SiO2-Si (N-type) tunnel structures. Influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface

G. Pananakakis, G. Kamarinos, M. El-Sayed and V. Le Goascoz
Solid-State Electronics 26 (5) 415 (1983)
https://doi.org/10.1016/0038-1101(83)90097-7

Tunneling solar cell under concentrated light illumination

A. Myszkowski, L. E. Sansores and J. Tagüeña-Martínez
Journal of Applied Physics 52 (6) 4288 (1981)
https://doi.org/10.1063/1.329282