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Article cité :
D. Bois , A. Chantre
Rev. Phys. Appl. (Paris), 15 3 (1980) 631-646
Citations de cet article :
37 articles
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Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors
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Photo-and thermally induced optical absorption and photoconductivity of sillenite crystals
T. V. Panchenko Physics of the Solid State 42 (4) 657 (2000) https://doi.org/10.1134/1.1131266
Thermooptical investigation of deep levels in doped Bi12SiO20 crystals
T. V. Panchenko Physics of the Solid State 40 (3) 415 (1998) https://doi.org/10.1134/1.1130335
Correlation of electrical and optical properties of the vanadium-related C level in silicon
R. Pässler, H. Pettersson, H. G. Grimmeiss and K. Schmalz Physical Review B 55 (7) 4312 (1997) https://doi.org/10.1103/PhysRevB.55.4312
Spatially resolved deep level transient spectroscopy using a scanning tunneling microscope
K. Maeda, M. Uota and Y. Mera Materials Science and Engineering: B 42 (1-3) 127 (1996) https://doi.org/10.1016/S0921-5107(96)01693-5
Imperfections in III/V Materials
Maria Kaminska and Eicke R. Weber Semiconductors and Semimetals, Imperfections in III/V Materials 38 59 (1993) https://doi.org/10.1016/S0080-8784(08)62798-2
Festkörperprobleme 29
Ulrich Kaufmann Advances in Solid State Physics, Festkörperprobleme 29 29 183 (1989) https://doi.org/10.1007/BFb0108012
Constant-capacitance deep-level optical spectroscopy
J. Vilanova, S. Dueñas, E. Rubio, et al. Solid-State Electronics 32 (4) 287 (1989) https://doi.org/10.1016/0038-1101(89)90078-6
Optical properties of EL2
M. Kaminska Revue de Physique Appliquée 23 (5) 793 (1988) https://doi.org/10.1051/rphysap:01988002305079300
EL2 in photoconductivity spectra of Cr-doped SI GaAs bulk crystals
K Germanova, V Donchev, C Hardalov and L Nikolov Journal of Physics D: Applied Physics 20 (11) 1507 (1987) https://doi.org/10.1088/0022-3727/20/11/023
EL2 Defect in GaAs
M Kaminska Physica Scripta T19B 551 (1987) https://doi.org/10.1088/0031-8949/1987/T19B/038
Optical Assessment of the Interaction Between EL2 and EL6 Levels in Boron Implanted GaAs
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A study of EL2photoquenching properties by photoconductivity measurements of SI GaAs: Cr
J L Farvacque, B Gruson and D Vignaud Semiconductor Science and Technology 2 (5) 268 (1987) https://doi.org/10.1088/0268-1242/2/5/004
Electric field-induced negative photoconductivity in GaAs
H. H. Wieder, Cynthia M. Hanson and Rainer Zuleeg Journal of Applied Physics 59 (11) 3911 (1986) https://doi.org/10.1063/1.336735
Evaluation of a defect capture cross section for minority carriers: Application to GaAs
D. Stievenard and J. C. Bourgoin Journal of Applied Physics 59 (3) 808 (1986) https://doi.org/10.1063/1.336602
Optical behavior of the U band in relation to EL2 and EL6 levels in boron-implanted GaAs
J. Samitier, J. R. Morante, L. Giraudet and S. Gourrier Applied Physics Letters 48 (17) 1138 (1986) https://doi.org/10.1063/1.96449
Technological and physical aspects of the main EL2 defect in GaAs
M. Kaminśka, M. Skowroński, W. Kuszko, et al. Czechoslovak Journal of Physics 34 (5) 409 (1984) https://doi.org/10.1007/BF01590082
Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi-insulating GaAs
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Deep-centre characterisation by thermally controlled paramagnetic resonance: TCPR
H J von Bardeleben Journal of Physics C: Solid State Physics 17 (13) 2391 (1984) https://doi.org/10.1088/0022-3719/17/13/020
Deep centers in gallium arsenide associated with intrinsic structural defects
B. I. Boltaks, M. N. Kolotov and E. A. Skoryatina Soviet Physics Journal 26 (10) 919 (1983) https://doi.org/10.1007/BF00896646
The role of deep-level centers and compensation in producing semi-insulating GaAs
E. J. Johnson, J. A. Kafalas and R. W. Davies Journal of Applied Physics 54 (1) 204 (1983) https://doi.org/10.1063/1.331742
Semiconductors and Semimetals
G.F. Neumark and K. Kosai Semiconductors and Semimetals 19 1 (1983) https://doi.org/10.1016/S0080-8784(08)60274-4
Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor
S. Makram-Ebeid and M. Lannoo Physical Review B 25 (10) 6406 (1982) https://doi.org/10.1103/PhysRevB.25.6406
Deep center EL2 and anti-Stokes luminescence in semi-insulating GaAs
E. J. Johnson, J. Kafalas, R. W. Davies and W. A. Dyes Applied Physics Letters 40 (11) 993 (1982) https://doi.org/10.1063/1.92954
Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in Semiconductors
S. Makram-Ebeid and M. Lannoo Physical Review Letters 48 (18) 1281 (1982) https://doi.org/10.1103/PhysRevLett.48.1281
Thermal Spectroscopy of Impurity Levels by Optical Absorption in Bulk GaAs
J. P. Fillard, J. Bonnafe and M. Castagne physica status solidi (a) 72 (1) K65 (1982) https://doi.org/10.1002/pssa.2210720158
Detailed optical characterization of the deep cr level in gaas
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G M Martin, G Jacob, J P Hallais, et al. Journal of Physics C: Solid State Physics 15 (9) 1841 (1982) https://doi.org/10.1088/0022-3719/15/9/008
J M Noras and H R Szawelska Journal of Physics C: Solid State Physics 15 (9) 2001 (1982) https://doi.org/10.1088/0022-3719/15/9/020
A luminescence band associated with the main electron trap in bulk gallium arsenide
A. Mircea-Roussel and S. Makram-Ebeid Applied Physics Letters 38 (12) 1007 (1981) https://doi.org/10.1063/1.92247
Deep-level optical spectroscopy in GaAs
A. Chantre, G. Vincent and D. Bois Physical Review B 23 (10) 5335 (1981) https://doi.org/10.1103/PhysRevB.23.5335
Optical characterization of the deep Cr level in GaAs
P. Leyral, F. Litty, S. Loualiche, A. Nouailhat and G. Guillot Solid State Communications 38 (4) 333 (1981) https://doi.org/10.1016/0038-1098(81)90474-9
Deep center characterization by optically-controlled paramagnetic resonance in AgGaS2
H. J. Von Bardeleben, A. Goltzene, C. Schwab and R. S. Feigelson Journal of Applied Physics 52 (8) 5037 (1981) https://doi.org/10.1063/1.329446
Optical assessment of the main electron trap in bulk semi-insulating GaAs
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