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Cited article:

Influence de la température sur la vitesse limite des porteurs dans un transistor M.O.S. à canal court

M. Gamboa, G. Sarrabayrouse, H. Tranduc, P. Rossel

Rev. Phys. Appl. (Paris), 15 5 (1980) 973-975

DOI: https://doi.org/10.1051/rphysap:01980001505097300

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Power MOS devices: Structure evolutions and modelling approaches

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The Physics of Submicron Structures

Hao Chu, M. Charef, J. Zimmermann, R. Fauquembergue and E. Constant
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A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices

Chu Hao, J. Zimmermann, M. Charef, R. Fauquembergue and E. Constant
Physica Status Solidi (a) 81 (2) 569 (1984)
https://doi.org/10.1002/pssa.2210810220