Nature of defects in heavily Te-doped GaAs
Rev. Phys. Appl. (Paris), 18 8 (1983) 475-478
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications
Gwenaëlle Hamon, Nicolas Paillet, José Alvarez, Alexandre Larrue and Jean DecobertJournal of Crystal Growth 498 301 (2018)
https://doi.org/10.1016/j.jcrysgro.2018.07.003
Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells
Ho Kwan Kang, Sang-Hyuk Park, Dong Hwan Jun, et al.Semiconductor Science and Technology 26 (7) 075009 (2011)
https://doi.org/10.1088/0268-1242/26/7/075009
Vacancy-associated Te sites in GaAs
K. Wuyts, G. Langouche, M. Van Rossum and R. E. SilveransPhysical Review B 45 (11) 6297 (1992)
https://doi.org/10.1103/PhysRevB.45.6297
Impurity lattice sites after implantation of Te and Sb in GaAs: Search for the DX centre
G. L. Zhang, D. Mo, Z. N. Liang and L. NiesenHyperfine Interactions 56 (1-4) 1661 (1990)
https://doi.org/10.1007/BF02405491
Mössbauer search for the DX-center
G. LangoucheHyperfine Interactions 47-48 (1-4) 85 (1989)
https://doi.org/10.1007/BF02351601
Mössbauer Spectroscopy Applied to Inorganic Chemistry
Guido LangoucheMössbauer Spectroscopy Applied to Inorganic Chemistry 445 (1989)
https://doi.org/10.1007/978-1-4899-2289-2_10
Sn119Mössbauer study of shallow and deep states of Sn inGa1−xAlxAs
P. Gibart, D. L. Williamson, B. El Jani and P. BasmajiPhysical Review B 38 (3) 1885 (1988)
https://doi.org/10.1103/PhysRevB.38.1885
Doped semiconductors and other solar energy materials
D. L. WilliamsonHyperfine Interactions 40 (1-4) 249 (1988)
https://doi.org/10.1007/BF02049094
Mössbauer spectroscopy of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy
D. L. Williamson, P. Gibart, B. El Jani and K. N’GuessanJournal of Applied Physics 62 (5) 1739 (1987)
https://doi.org/10.1063/1.339603
Mössbauer spectroscopy of Sn-doped GaAs grown by liquid-phase epitaxy
D. L. WilliamsonJournal of Applied Physics 60 (10) 3466 (1986)
https://doi.org/10.1063/1.337595