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Residual stress analysis of thin film photovoltaic cells subjected to massive micro-particle impact

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InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

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Semiconductor Science and Technology 31 (3) 035022 (2016)
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Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P

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Resonant Raman Scattering in Ga1—xInxP Solid Solutions

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