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Cited article:

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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range

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Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system

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Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition

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High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area

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Long-wavelength photodiodes based on Ga1−x InxAsySb1−y wit composition near the miscibility boundary

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Origin of recombination transitions at the lattice-matched GaInAsSb-GaSb n-N type-II heterojunctions

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Optical properties and fluctuations of composition in Ga0.77In0.23As0.19Sb0.81 alloys

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High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary

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