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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors
Shouzhu Niu, Zhipeng Wei, Xuan Fang, Dengkui Wang, Xinwei Wang, Xian Gao and Rui Chen Crystals 7(11) 337 (2017) https://doi.org/10.3390/cryst7110337
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
E. V. Kunitsyna, E. A. Grebenshchikova, G. G. Konovalov, I. A. Andreev and Yu. P. Yakovlev Semiconductors 50(10) 1403 (2016) https://doi.org/10.1134/S1063782616100158
Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system
High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area
I. A. Andreev, N. D. Il’inskaya, E. V. Kunitsyna, M. P. Mikhailova and Yu. P. Yakovlev Semiconductors 37(8) 949 (2003) https://doi.org/10.1134/1.1601665
Band parameters for III–V compound semiconductors and their alloys
Origin of recombination transitions at the lattice-matched GaInAsSb-GaSb n-N type-II heterojunctions
E. Hulicius, J. Oswald, J. Pangrác, T. Šimeček, N. S. Bresler, V. N. Cheban, O. B. Gusev and A. N. Titkov Journal of Applied Physics 75(8) 4189 (1994) https://doi.org/10.1063/1.356003
Optical properties and fluctuations of composition in Ga0.77In0.23As0.19Sb0.81 alloys