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Cited article:

Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone

Coralie Perrier, Aboulaye Traoré, Toshimitsu Ito, et al.
Applied Physics Letters 122 (22) (2023)
https://doi.org/10.1063/5.0149969

Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions

P. Muret, D. Elguennouni, M. Missous and E. H. Rhoderick
Applied Physics Letters 58 (2) 155 (1991)
https://doi.org/10.1063/1.104958

Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes

J.M. Palau and M. Dumas
Thin Solid Films 191 (1) 21 (1990)
https://doi.org/10.1016/0040-6090(90)90270-N

Etude de diodes Schottky réalisées sous ultra-vide par dépôt d'aluminium ou d'argent sur GaP type N clivé

M. Benkacem, M. Dumas, J.M. Palau and L. Lassabatère
Revue de Physique Appliquée 24 (1) 45 (1989)
https://doi.org/10.1051/rphysap:0198900240104500