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Cited article:
C. Barret , G.N. Lu , T. Neffati
Rev. Phys. Appl. (Paris), 22 11 (1987) 1485-1493
This article has been cited by the following article(s):
7 articles
Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone
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Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions
P. Muret, D. Elguennouni, M. Missous and E. H. Rhoderick Applied Physics Letters 58 (2) 155 (1991) https://doi.org/10.1063/1.104958
Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes
J.M. Palau and M. Dumas Thin Solid Films 191 (1) 21 (1990) https://doi.org/10.1016/0040-6090(90)90270-N
Effect of inside-spread surface states on Fermi level pinning
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Consequences of spatial distributions of the interface states on the Schottky barrier
G.N. Lu, C. Barret and T. Neffati Solid-State Electronics 33 (1) 1 (1990) https://doi.org/10.1016/0038-1101(90)90002-V
Etude de diodes Schottky réalisées sous ultra-vide par dépôt d'aluminium ou d'argent sur GaP type N clivé
M. Benkacem, M. Dumas, J.M. Palau and L. Lassabatère Revue de Physique Appliquée 24 (1) 45 (1989) https://doi.org/10.1051/rphysap:0198900240104500
Caractérisation électronique d'interfaces profondes Al-InP
C. Barret, F. Vergand, H. Maaref, C. Sénémaud and C. Bonnelle Revue de Physique Appliquée 24 (4) 439 (1989) https://doi.org/10.1051/rphysap:01989002404043900