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Article cité :
J.J. Aubert , J.J. Bacmann
Rev. Phys. Appl. (Paris), 22 7 (1987) 515-518
Citations de cet article :
12 articles
In situ atomistic observations of dynamics of Lomer dislocations in Au subjected to electron-beam irradiation
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Faceting–roughening transition of a Cu grain boundary under electron-beam irradiation at 300 keV
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Migration Pinning and Roughening Transition of a Ni Grain Boundary
Sung Bo Lee, Jinwook Jung, Seung Jo Yoo and Heung Nam Han Metallurgical and Materials Transactions A 51 (3) 1067 (2020) https://doi.org/10.1007/s11661-019-05579-1
Electronic and Optical Properties of Dislocations in Silicon
Manfred Reiche and Martin Kittler Crystals 6 (7) 74 (2016) https://doi.org/10.3390/cryst6070074
Dislocations as native nanostructures - electronic properties
Manfred Reiche, Martin Kittler, Hartmut Uebensee, Eckhard Pippel and Sigrid Hopfe Advances in nano research 2 (1) 1 (2014) https://doi.org/10.12989/anr.2014.2.1.001
Competitive Role of Impurities on the Electrical Activity of as-grown Σ=13, Σ=25 and Deformed Σ=9 Grain boundaries in p-type Silicon Bi-crystals
S. Gaiaschi, A. El Kouadri Boudjelthia, G. Regula, et al. MRS Proceedings 1474 (2012) https://doi.org/10.1557/opl.2012.1472
Structure and properties of dislocations in interfaces of bonded silicon wafers
M Reiche, M Kittler, R Scholz, A Hähnel and T Arguirov Journal of Physics: Conference Series 281 012017 (2011) https://doi.org/10.1088/1742-6596/281/1/012017
EBIC and TEM analysis of the electrical activity of Σ = 25 and Σ = 13 silicon bicrystals after thermal treatments
A. Ihlal and G. Nouet Physica Status Solidi (a) 141 (1) 81 (1994) https://doi.org/10.1002/pssa.2211410108
Origine des centres recombinants aux joints de grains de bicristaux de silicium Σ = 13
H. Amanrich, M. Pasquinelli and S. Martinuzzi Revue de Physique Appliquée 25 (11) 1121 (1990) https://doi.org/10.1051/rphysap:0199000250110112100
Polycrystalline Semiconductors
J.-L. Maurice and C. Colliex Springer Proceedings in Physics, Polycrystalline Semiconductors 35 83 (1989) https://doi.org/10.1007/978-3-642-93413-1_11
Precipitation at grain boundaries in silicon
J.F. Hamet, R. Abdelaoui, G. Nouet and G. Allais Materials Science and Engineering: B 4 (1-4) 143 (1989) https://doi.org/10.1016/0921-5107(89)90231-6
Polycrystalline Semiconductors
A. Ihlal and G. Nouet Springer Proceedings in Physics, Polycrystalline Semiconductors 35 77 (1989) https://doi.org/10.1007/978-3-642-93413-1_10