La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
J.-L. Maurice
Rev. Phys. Appl. (Paris), 22 7 (1987) 613-621
Citations de cet article :
36 articles
Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications
Sunjae Kim, Heejoong Ryou, In Gyu Lee, et al. RSC Advances 11 (13) 7338 (2021) https://doi.org/10.1039/D1RA00021G
Interfacial atomic structure and electrical activity of nano-facetted CSL grain boundaries in high-performance multi-crystalline silicon
M. G. Tsoutsouva, P. E. Vullum, K. Adamczyk, M. Di Sabatino and G. Stokkan Journal of Applied Physics 127 (12) (2020) https://doi.org/10.1063/1.5130996
Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC
Dariya Savchenko, Vladimir Rodionov, Andrey Prokhorov, et al. Journal of Alloys and Compounds 823 153752 (2020) https://doi.org/10.1016/j.jallcom.2020.153752
A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
J. Chen, E. Cornagliotti, E. Simoen, et al. physica status solidi (RRL) – Rapid Research Letters 5 (8) 277 (2011) https://doi.org/10.1002/pssr.201105225
Interfacial state and potential barrier height associated with grain boundaries in polycrystalline silicon
Sadahiro Tsurekawa, Kota Kido and Tadao Watanabe Materials Science and Engineering: A 462 (1-2) 61 (2007) https://doi.org/10.1016/j.msea.2006.02.471
Charge imbalance at oxide interfaces: How nature deals with it
J.-L. Maurice, I. Devos, M.-J. Casanove, et al. Materials Science and Engineering: B 144 (1-3) 1 (2007) https://doi.org/10.1016/j.mseb.2007.07.095
Measurements of potential barrier height of grain boundaries in polycrystalline silicon by Kelvin probe force microscopy
S. Tsurekawa *, K. Kido and T. Watanabe Philosophical Magazine Letters 85 (1) 41 (2005) https://doi.org/10.1080/09500830500153859
Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
Sadahiro Tsurekawa, Kota Kido, Shu Hamada, Tadao Watanabe and Takashi Sekiguchi Zeitschrift für Metallkunde 96 (2) 197 (2005) https://doi.org/10.3139/146.101020
Electrical characterization of interfaces in unitype directly bonded silicon wafers
A. Fedotov, Anis M.H. Saad, K. Enisherlova and A. Mazanik Materials Science and Engineering: B 91-92 384 (2002) https://doi.org/10.1016/S0921-5107(01)01026-1
Metallic and non-metallic longitudinal conductance of grain boundaries in bicrystalline and polycrystalline germanium doped with mercury and antimony
A K Fedotov, A V Mazanik, T Figielski, A Makosa and Yu M Ilyashuk Journal of Physics: Condensed Matter 14 (48) 13111 (2002) https://doi.org/10.1088/0953-8984/14/48/357
Relationship between Electrical Activity and Grain Boundary Structural Configuration in Polycrystalline Silicon
Zhan-Jie Wang, Sadahiro Tsurekawa, Kenji Ikeda, Takashi Sekiguchi and Tadao Watanabe Interface Science 7 (2) 197 (1999) https://doi.org/10.1023/A:1008796005240
Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency
N. M'Gafad, H. Amzil, D. Sayah, D. Ballutaud and M. Barbé Solid-State Electronics 43 (5) 857 (1999) https://doi.org/10.1016/S0038-1101(99)00011-8
Modeling of the recombination at grain boundaries in preferentially doped polysilicon solar cells
Adel Ben Arab Solid-State Electronics 41 (9) 1355 (1997) https://doi.org/10.1016/S0038-1101(97)00148-2
EBIC and TEM analysis of the electrical activity of Σ = 25 and Σ = 13 silicon bicrystals after thermal treatments
A. Ihlal and G. Nouet Physica Status Solidi (a) 141 (1) 81 (1994) https://doi.org/10.1002/pssa.2211410108
What information on extended defects do we obtain from beam-injection methods?
H. Alexander Materials Science and Engineering: B 24 (1-3) 1 (1994) https://doi.org/10.1016/0921-5107(94)90288-7
Local investigation of recombination at grain boundaries in silicon by grain boundary-electron beam induced current
J. Palm Journal of Applied Physics 74 (2) 1169 (1993) https://doi.org/10.1063/1.354917
Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon
P.R. Suresh and M. Satyam Solar Energy Materials and Solar Cells 30 (3) 193 (1993) https://doi.org/10.1016/0927-0248(93)90139-T
Local investigation of grain boundaries by grain-boundary EBIC
J. Palm and H. Alexander Physica Status Solidi (a) 138 (2) 639 (1993) https://doi.org/10.1002/pssa.2211380233
TEM and DLTS Investigations of the Electrical Activity of Σ17 and Σ41 Grain Boundaries in Germanium
N. Wang and P. Haasen physica status solidi (b) 170 (2) 403 (1992) https://doi.org/10.1002/pssb.2221700205
The bonded unipolar silicon-silicon junction
Stefan Bengtsson, Gert I. Andersson, Mats O. Andersson and Olof Engström Journal of Applied Physics 72 (1) 124 (1992) https://doi.org/10.1063/1.352172
Determination of grain-boundary defect-state densities from transport measurements
P. V. Evans and S. F. Nelson Journal of Applied Physics 69 (6) 3605 (1991) https://doi.org/10.1063/1.348506
The Origin of Electrically Active Centers in a Near‐Coincidence Σ9 Grain Boundary in Germanium
N. Wang, P. J. Wilbrandt and P. Haasen physica status solidi (b) 166 (2) 347 (1991) https://doi.org/10.1002/pssb.2221660204
Polycrystalline Semiconductors II
J.-L. Maurice Springer Proceedings in Physics, Polycrystalline Semiconductors II 54 166 (1991) https://doi.org/10.1007/978-3-642-76385-4_23
Structural complexity in grain boundaries with covalent bonding
E. Tarnow, P. Dallot, P. D. Bristowe, et al. Physical Review B 42 (6) 3644 (1990) https://doi.org/10.1103/PhysRevB.42.3644
Grain boundary structure and electrical activity in shaped silicon
A. Fedotov, B. Evtody, L. Fionova, et al. Journal of Crystal Growth 104 (1) 186 (1990) https://doi.org/10.1016/0022-0248(90)90330-N
Localization of the electrical activity of structural defects in polycrystalline silicon
C. Cabanel and J. Y. Laval Journal of Applied Physics 67 (3) 1425 (1990) https://doi.org/10.1063/1.345673
Electrical Activity of Grain Boundaries in Shaped Grown Silicon
A. Fedotov, B. Evtodyi, L. Fionova, et al. physica status solidi (a) 119 (2) 523 (1990) https://doi.org/10.1002/pssa.2211190215
Electrically inactive grain boundaries in rapid thermal annealed boron-implanted polycrystalline silicon films
A. Almaggoussi, J. Sicart, J. L. Robert, G. Chaussemy and A. Laugier Applied Physics Letters 56 (25) 2536 (1990) https://doi.org/10.1063/1.102879
Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary
J.-L. Maurice and C. Colliex Applied Physics Letters 55 (3) 241 (1989) https://doi.org/10.1063/1.101919
Polycrystalline Semiconductors
N. Tabet, C. Monty and Y. Marfaing Springer Proceedings in Physics, Polycrystalline Semiconductors 35 89 (1989) https://doi.org/10.1007/978-3-642-93413-1_12
Electrical properties of highly boron-implanted polycrystalline silicon after rapid or conventional thermal annealing
A. Almaggoussi, J. Sicart, J. L. Robert, G. Chaussemy and A. Laugier Journal of Applied Physics 66 (9) 4301 (1989) https://doi.org/10.1063/1.343975
A tight-binding study of grain boundaries in silicon
A.T. Paxton and A.P. Sutton Acta Metallurgica 37 (7) 1693 (1989) https://doi.org/10.1016/0001-6160(89)90056-4
Annealing and temperature dependences of the electrical activity of grain boundaries in germanium observed by SENVEBIC techniques
N. Tabet, C. Monty and Y. Marfaing Revue de Physique Appliquée 24 (9) 871 (1989) https://doi.org/10.1051/rphysap:01989002409087100
Ab-Initio Molecular Dynamics Approach to the Study of Grain Boundaries in Semiconductors
E. Tarnow, P. D. Bristowe, J. D. Joannopoulos and M. C. Payne MRS Proceedings 141 (1988) https://doi.org/10.1557/PROC-141-333
Modelling of the Atomic and Electronic Structures of Interfaces
Adrian P. Sutton MRS Proceedings 122 (1988) https://doi.org/10.1557/PROC-122-81
Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs
A. Djemel, J. Castaing and J. Chevallier Revue de Physique Appliquée 23 (7) 1337 (1988) https://doi.org/10.1051/rphysap:019880023070133700