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Article cité :
S. Miyazawa , K. Watanabe , J. Osaka , K. Ikuta
Rev. Phys. Appl. (Paris), 23 5 (1988) 727-738
Citations de cet article :
23 articles
Correlation of two diamagnetic bands of the magnetic circular dichroism of the optical absorption with EL2 in GaAs
K. H. Wietzke, F. K. Koschnick and K. Krambrock Applied Physics Letters 71 (15) 2133 (1997) https://doi.org/10.1063/1.119359
Defect identification in semiconductors by Brewster angle spectroscopy
H. J. Lewerenz and N. Dietz Journal of Applied Physics 73 (10) 4975 (1993) https://doi.org/10.1063/1.353817
Structural aspects of non-stoichiometry and heavy doping of GaAs
Isao Fujimoto Materials Science and Engineering: B 14 (4) 426 (1992) https://doi.org/10.1016/0921-5107(92)90087-P
Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs
Shintaro Miyazawa Progress in Crystal Growth and Characterization of Materials 23 23 (1992) https://doi.org/10.1016/0960-8974(92)90019-M
Magnetic circular dichroism and optical detection of electron paramagnetic resonance of theSbGaheteroantisite defect in GaAs:Sb
P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler and U. Kaufmann Physical Review B 45 (7) 3349 (1992) https://doi.org/10.1103/PhysRevB.45.3349
Non-Stoichiometry in Semiconductors
Isao Fujimoto Non-Stoichiometry in Semiconductors 27 (1992) https://doi.org/10.1016/B978-0-444-89355-0.50008-9
Measurement of Harmonic Reflections - An X-Ray Method for Real Structure Analysis of Semiconducting Compounds
F. Mücklich and H. Oettel Physica Status Solidi (a) 129 (2) 323 (1992) https://doi.org/10.1002/pssa.2211290203
Non-Stoichiometry in Semiconductors
G. Brémond, G. Guillot, D. Stievenard and R. Azoulay Non-Stoichiometry in Semiconductors 217 (1992) https://doi.org/10.1016/B978-0-444-89355-0.50031-4
X‐ray Characterization of Defect Structure in LEC Annealed GaAs Crystals
T. Czekalski and E. Zielińska‐Rohozińska Crystal Research and Technology 27 (7) 947 (1992) https://doi.org/10.1002/crat.2170270712
TEM characterization of defects in LEC-grown GaAs substrates
P. Wurzinger, H. Oppolzer, P. Pongratz and P. Skalicky Journal of Crystal Growth 110 (4) 769 (1991) https://doi.org/10.1016/0022-0248(91)90635-I
Kinetics of formation and dissociation of a dominant native defect (EL2) in GaAs
Richard A. Morrow Journal of Applied Physics 69 (8) 4306 (1991) https://doi.org/10.1063/1.348404
First direct observation of voids in bulk, undoped, semi-insulating GaAs
G. M. Williams, A. G. Cullis and D. J. Stirland Applied Physics Letters 59 (20) 2585 (1991) https://doi.org/10.1063/1.105910
Optical and magneto-optical determination of the EL2 concentrations in semi-insulating GaAs
D M Hofmann, K Krambrock, B K Meyer and J -M Spaeth Semiconductor Science and Technology 6 (3) 170 (1991) https://doi.org/10.1088/0268-1242/6/3/005
Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs
M.R. Brozel, L. Breivik, D.J. Stirland, G.M. Williams and A.G. Cullis Applied Surface Science 50 (1-4) 475 (1991) https://doi.org/10.1016/0169-4332(91)90221-5
Point Defects and Diffusion in Semiconductors
Ulrich M. Gösele and Teh Y. Tan MRS Bulletin 16 (11) 42 (1991) https://doi.org/10.1557/S0883769400055512
Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs
Tamotsu Hashizume, Hideki Hasegawa and Hideo Ohno Journal of Applied Physics 68 (7) 3394 (1990) https://doi.org/10.1063/1.346344
A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs
S. Clark, M.R. Brozel and D.J. Stirland Journal of Crystal Growth 103 (1-4) 102 (1990) https://doi.org/10.1016/0022-0248(90)90176-L
Defect Control in Semiconductors
Hiromasa YAMAMOTO, Haruhito SHIMAKURA, Gaku KANO, et al. Defect Control in Semiconductors 1273 (1990) https://doi.org/10.1016/B978-0-444-88429-9.50053-7
Defect Control in Semiconductors
Tadeusz WOSINSKI Defect Control in Semiconductors 1465 (1990) https://doi.org/10.1016/B978-0-444-88429-9.50082-3
EL2 and anion antisite defects in plastically deformed GaAs
D. M. Hofmann, B. K. Meyer, J.-M. Spaeth, et al. Journal of Applied Physics 68 (7) 3381 (1990) https://doi.org/10.1063/1.346341
Photoquenching and photoinduced-recovery properties of theEL2defect in GaAs: Evidence against the identification ofEL2with the isolatedAsGadefect
M. O. Manasreh and D. W. Fischer Physical Review B 39 (17) 13001 (1989) https://doi.org/10.1103/PhysRevB.39.13001
Characterisation of deep electron states in LEC grown GaAs material
T Hashizume and H Nagabuchi Semiconductor Science and Technology 4 (6) 427 (1989) https://doi.org/10.1088/0268-1242/4/6/002
Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defects
H. J. von Bardeleben, J. C. Bourgoin and D. Stievenard Applied Physics Letters 53 (12) 1089 (1988) https://doi.org/10.1063/1.100030