Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Correlation of two diamagnetic bands of the magnetic circular dichroism of the optical absorption with EL2 in GaAs

K. H. Wietzke, F. K. Koschnick and K. Krambrock
Applied Physics Letters 71 (15) 2133 (1997)
https://doi.org/10.1063/1.119359

Defect identification in semiconductors by Brewster angle spectroscopy

H. J. Lewerenz and N. Dietz
Journal of Applied Physics 73 (10) 4975 (1993)
https://doi.org/10.1063/1.353817

Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs

Shintaro Miyazawa
Progress in Crystal Growth and Characterization of Materials 23 23 (1992)
https://doi.org/10.1016/0960-8974(92)90019-M

Magnetic circular dichroism and optical detection of electron paramagnetic resonance of theSbGaheteroantisite defect in GaAs:Sb

P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler and U. Kaufmann
Physical Review B 45 (7) 3349 (1992)
https://doi.org/10.1103/PhysRevB.45.3349

Measurement of Harmonic Reflections - An X-Ray Method for Real Structure Analysis of Semiconducting Compounds

F. Mücklich and H. Oettel
Physica Status Solidi (a) 129 (2) 323 (1992)
https://doi.org/10.1002/pssa.2211290203

X‐ray Characterization of Defect Structure in LEC Annealed GaAs Crystals

T. Czekalski and E. Zielińska‐Rohozińska
Crystal Research and Technology 27 (7) 947 (1992)
https://doi.org/10.1002/crat.2170270712

Kinetics of formation and dissociation of a dominant native defect (EL2) in GaAs

Richard A. Morrow
Journal of Applied Physics 69 (8) 4306 (1991)
https://doi.org/10.1063/1.348404

First direct observation of voids in bulk, undoped, semi-insulating GaAs

G. M. Williams, A. G. Cullis and D. J. Stirland
Applied Physics Letters 59 (20) 2585 (1991)
https://doi.org/10.1063/1.105910

Optical and magneto-optical determination of the EL2 concentrations in semi-insulating GaAs

D M Hofmann, K Krambrock, B K Meyer and J -M Spaeth
Semiconductor Science and Technology 6 (3) 170 (1991)
https://doi.org/10.1088/0268-1242/6/3/005

Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs

M.R. Brozel, L. Breivik, D.J. Stirland, G.M. Williams and A.G. Cullis
Applied Surface Science 50 (1-4) 475 (1991)
https://doi.org/10.1016/0169-4332(91)90221-5

Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs

Tamotsu Hashizume, Hideki Hasegawa and Hideo Ohno
Journal of Applied Physics 68 (7) 3394 (1990)
https://doi.org/10.1063/1.346344

EL2 and anion antisite defects in plastically deformed GaAs

D. M. Hofmann, B. K. Meyer, J.-M. Spaeth, et al.
Journal of Applied Physics 68 (7) 3381 (1990)
https://doi.org/10.1063/1.346341

Photoquenching and photoinduced-recovery properties of theEL2defect in GaAs: Evidence against the identification ofEL2with the isolatedAsGadefect

M. O. Manasreh and D. W. Fischer
Physical Review B 39 (17) 13001 (1989)
https://doi.org/10.1103/PhysRevB.39.13001

Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defects

H. J. von Bardeleben, J. C. Bourgoin and D. Stievenard
Applied Physics Letters 53 (12) 1089 (1988)
https://doi.org/10.1063/1.100030