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Cited article:

Photoelectrochemical measurement of effective diffusion length of carriers in lamellar semiconductors. Application to InSe

B. Theys

Rev. Phys. Appl. (Paris), 23 8 (1988) 1375-1382

DOI: https://doi.org/10.1051/rphysap:019880023080137500

This article has been cited by the following article(s):

Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction

Emilio J. Juarez‐Perez and Yabing Qi
physica status solidi (b) 256 (10) (2019)
https://doi.org/10.1002/pssb.201900126

Photoelectrochemistry and Photovoltaics of Layered Semiconductors

E. Bucher
Physics and Chemistry of Materials with Low-Dimensional Structures, Photoelectrochemistry and Photovoltaics of Layered Semiconductors 14 1 (1992)
https://doi.org/10.1007/978-94-015-1301-2_1

Laser spot scanning in photoelectrochemical systems, relation between spot size and spatial resolution of the photocurrent

S. Eriksson, P. Carlsson, B. Holmström and K. Uosaki
Journal of Applied Physics 69 (4) 2324 (1991)
https://doi.org/10.1063/1.348714