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Modelling of material properties influence on back junction thin polycrystalline silicon solar cells

J. Dugas
Solar Energy Materials and Solar Cells 43 (2) 193 (1996)
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3D modelling of a reverse cell made with improved multicrystalline silicon wafers

J. Dugas
Solar Energy Materials and Solar Cells 32 (1) 71 (1994)
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Development of a three-dimensional numerical model of grain boundaries in highly doped polycrystalline silicon and applications to solar cells

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Photovoltaic properties and high efficiency of preferentially doped polysilicon solar cells

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Theory of grain boundary recombination and carrier transport in polycrystalline silicon under optical illumination

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Effect of Gaussian doping on the performance of a n+-p thin film polycrystalline solar cell under illumination

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3D determination of the minority carrier lifetime and the p-n junction recombination velocity of a polycrystalline silicon solar cell

R Sam, B Zouma, F Zougmoré, et al.
IOP Conference Series: Materials Science and Engineering 29 012018 (2012)
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Determination of polysilicon solar cell parameters using electrical short-circuit current decay method

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Solid-State Electronics 42 (4) 541 (1998)
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Anomalously high collection probability in thin film polycrystalline silicon solar cells from numerical modeling

S. A. Edmiston
Journal of Applied Physics 81 (5) 2282 (1997)
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Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate

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Solid State Phenomena 95-96 149 (2003)
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Recombination properties of grain boundaries in polycrystalline silicon under illumination

Fanying Meng, Tietun Sun and Rongqiang Cui
Semiconductor Science and Technology 15 (9) 926 (2000)
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