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Point Defects and Diffusion in Semiconductors

Ulrich M. Gösele and Teh Y. Tan
MRS Bulletin 16 (11) 42 (1991)
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Correlation of two diamagnetic bands of the magnetic circular dichroism of the optical absorption with EL20 in GaAs

K. H. Wietzke, F. K. Koschnick and K. Krambrock
Applied Physics Letters 71 (15) 2133 (1997)
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EL2 and anion antisite defects in plastically deformed GaAs

D. M. Hofmann, B. K. Meyer, J.-M. Spaeth, et al.
Journal of Applied Physics 68 (7) 3381 (1990)
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A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs

S. Clark, M.R. Brozel and D.J. Stirland
Journal of Crystal Growth 103 (1-4) 102 (1990)
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Structural aspects of non-stoichiometry and heavy doping of GaAs

Isao Fujimoto
Materials Science and Engineering: B 14 (4) 426 (1992)
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First direct observation of voids in bulk, undoped, semi‐insulating GaAs

G. M. Williams, A. G. Cullis and D. J. Stirland
Applied Physics Letters 59 (20) 2585 (1991)
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Kinetics of formation and dissociation of a dominant native defect (EL2) in GaAs

Richard A. Morrow
Journal of Applied Physics 69 (8) 4306 (1991)
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Defect identification in semiconductors by Brewster angle spectroscopy

H. J. Lewerenz and N. Dietz
Journal of Applied Physics 73 (10) 4975 (1993)
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Magnetic circular dichroism and optical detection of electron paramagnetic resonance of theSbGaheteroantisite defect in GaAs:Sb

P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler and U. Kaufmann
Physical Review B 45 (7) 3349 (1992)
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TEM characterization of defects in LEC-grown GaAs substrates

P. Wurzinger, H. Oppolzer, P. Pongratz and P. Skalicky
Journal of Crystal Growth 110 (4) 769 (1991)
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Non-Stoichiometry in Semiconductors

Isao Fujimoto
Non-Stoichiometry in Semiconductors 27 (1992)
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Defect Control in Semiconductors

Hiromasa YAMAMOTO, Haruhito SHIMAKURA, Gaku KANO, et al.
Defect Control in Semiconductors 1273 (1990)
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Measurement of Harmonic Reflections - An X-Ray Method for Real Structure Analysis of Semiconducting Compounds

F. Mücklich and H. Oettel
Physica Status Solidi (a) 129 (2) 323 (1992)
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Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs

Tamotsu Hashizume, Hideki Hasegawa and Hideo Ohno
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Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects

H. J. von Bardeleben, J. C. Bourgoin and D. Stievenard
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Optical and magneto-optical determination of the EL2 concentrations in semi-insulating GaAs

D M Hofmann, K Krambrock, B K Meyer and J -M Spaeth
Semiconductor Science and Technology 6 (3) 170 (1991)
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Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs

Shintaro Miyazawa
Progress in Crystal Growth and Characterization of Materials 23 23 (1992)
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Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs

M.R. Brozel, L. Breivik, D.J. Stirland, G.M. Williams and A.G. Cullis
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Non-Stoichiometry in Semiconductors

G. Brémond, G. Guillot, D. Stievenard and R. Azoulay
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Defect Control in Semiconductors

Defect Control in Semiconductors 1465 (1990)
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Photoquenching and photoinduced-recovery properties of theEL2defect in GaAs: Evidence against the identification ofEL2with the isolatedAsGadefect

M. O. Manasreh and D. W. Fischer
Physical Review B 39 (17) 13001 (1989)
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Characterisation of deep electron states in LEC grown GaAs material

T Hashizume and H Nagabuchi
Semiconductor Science and Technology 4 (6) 427 (1989)
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X-ray Characterization of Defect Structure in LEC Annealed GaAs Crystals

T. Czekalski and E. Zielińska-Rohozińska
Crystal Research and Technology 27 (7) 947 (1992)
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