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Point Defects and Diffusion in Semiconductors

Ulrich M. Gösele and Teh Y. Tan
MRS Bulletin 16 (11) 42 (1991)
DOI: 10.1557/S0883769400055512
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Correlation of two diamagnetic bands of the magnetic circular dichroism of the optical absorption with EL20 in GaAs

K. H. Wietzke, F. K. Koschnick and K. Krambrock
Applied Physics Letters 71 (15) 2133 (1997)
DOI: 10.1063/1.119359
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EL2 and anion antisite defects in plastically deformed GaAs

D. M. Hofmann, B. K. Meyer, J.-M. Spaeth, et al.
Journal of Applied Physics 68 (7) 3381 (1990)
DOI: 10.1063/1.346341
Voir cet article

A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs

S. Clark, M.R. Brozel and D.J. Stirland
Journal of Crystal Growth 103 (1-4) 102 (1990)
DOI: 10.1016/0022-0248(90)90176-L
Voir cet article

Structural aspects of non-stoichiometry and heavy doping of GaAs

Isao Fujimoto
Materials Science and Engineering: B 14 (4) 426 (1992)
DOI: 10.1016/0921-5107(92)90087-P
Voir cet article

First direct observation of voids in bulk, undoped, semi‐insulating GaAs

G. M. Williams, A. G. Cullis and D. J. Stirland
Applied Physics Letters 59 (20) 2585 (1991)
DOI: 10.1063/1.105910
Voir cet article

Kinetics of formation and dissociation of a dominant native defect (EL2) in GaAs

Richard A. Morrow
Journal of Applied Physics 69 (8) 4306 (1991)
DOI: 10.1063/1.348404
Voir cet article

Defect identification in semiconductors by Brewster angle spectroscopy

H. J. Lewerenz and N. Dietz
Journal of Applied Physics 73 (10) 4975 (1993)
DOI: 10.1063/1.353817
Voir cet article

Magnetic circular dichroism and optical detection of electron paramagnetic resonance of theSbGaheteroantisite defect in GaAs:Sb

P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler and U. Kaufmann
Physical Review B 45 (7) 3349 (1992)
DOI: 10.1103/PhysRevB.45.3349
Voir cet article

TEM characterization of defects in LEC-grown GaAs substrates

P. Wurzinger, H. Oppolzer, P. Pongratz and P. Skalicky
Journal of Crystal Growth 110 (4) 769 (1991)
DOI: 10.1016/0022-0248(91)90635-I
Voir cet article

Non-Stoichiometry in Semiconductors

Isao Fujimoto
Non-Stoichiometry in Semiconductors 27 (1992)
DOI: 10.1016/B978-0-444-89355-0.50008-9
Voir cet article

Defect Control in Semiconductors

Hiromasa YAMAMOTO, Haruhito SHIMAKURA, Gaku KANO, et al.
Defect Control in Semiconductors 1273 (1990)
DOI: 10.1016/B978-0-444-88429-9.50053-7
Voir cet article

Measurement of Harmonic Reflections - An X-Ray Method for Real Structure Analysis of Semiconducting Compounds

F. Mücklich and H. Oettel
Physica Status Solidi (a) 129 (2) 323 (1992)
DOI: 10.1002/pssa.2211290203
Voir cet article

Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs

Tamotsu Hashizume, Hideki Hasegawa and Hideo Ohno
Journal of Applied Physics 68 (7) 3394 (1990)
DOI: 10.1063/1.346344
Voir cet article

Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects

H. J. von Bardeleben, J. C. Bourgoin and D. Stievenard
Applied Physics Letters 53 (12) 1089 (1988)
DOI: 10.1063/1.100030
Voir cet article

Optical and magneto-optical determination of the EL2 concentrations in semi-insulating GaAs

D M Hofmann, K Krambrock, B K Meyer and J -M Spaeth
Semiconductor Science and Technology 6 (3) 170 (1991)
DOI: 10.1088/0268-1242/6/3/005
Voir cet article

Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs

Shintaro Miyazawa
Progress in Crystal Growth and Characterization of Materials 23 23 (1992)
DOI: 10.1016/0960-8974(92)90019-M
Voir cet article

Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs

M.R. Brozel, L. Breivik, D.J. Stirland, G.M. Williams and A.G. Cullis
Applied Surface Science 50 (1-4) 475 (1991)
DOI: 10.1016/0169-4332(91)90221-5
Voir cet article

Non-Stoichiometry in Semiconductors

G. Brémond, G. Guillot, D. Stievenard and R. Azoulay
Non-Stoichiometry in Semiconductors 217 (1992)
DOI: 10.1016/B978-0-444-89355-0.50031-4
Voir cet article

Defect Control in Semiconductors

Tadeusz WOSINSKI
Defect Control in Semiconductors 1465 (1990)
DOI: 10.1016/B978-0-444-88429-9.50082-3
Voir cet article

Photoquenching and photoinduced-recovery properties of theEL2defect in GaAs: Evidence against the identification ofEL2with the isolatedAsGadefect

M. O. Manasreh and D. W. Fischer
Physical Review B 39 (17) 13001 (1989)
DOI: 10.1103/PhysRevB.39.13001
Voir cet article

Characterisation of deep electron states in LEC grown GaAs material

T Hashizume and H Nagabuchi
Semiconductor Science and Technology 4 (6) 427 (1989)
DOI: 10.1088/0268-1242/4/6/002
Voir cet article

X-ray Characterization of Defect Structure in LEC Annealed GaAs Crystals

T. Czekalski and E. Zielińska-Rohozińska
Crystal Research and Technology 27 (7) 947 (1992)
DOI: 10.1002/crat.2170270712
Voir cet article