Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme strong>CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Citations de cet article :

Dielectric breakdown and Poole–Frenkel field saturation in silicon oxynitride thin films

S. Habermehl and R. T. Apodaca
Applied Physics Letters 86 (7) 072103 (2005)
DOI: 10.1063/1.1865338
Voir cet article

Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes

Ibrahim Nemr Noureddine, Naser Sedghi, Ivona Z. Mitrovic and Steve Hall
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35 (1) 01A117 (2017)
DOI: 10.1116/1.4974219
Voir cet article

A unified explanation for gate current in n-MOS devices based on hot electrons and the Poole-Frenkel effect

W.R. Harrell and J. Frey
Microelectronic Engineering 22 (1-4) 281 (1993)
DOI: 10.1016/0167-9317(93)90174-4
Voir cet article

Electrical conduction of metallized BOPP films based on revised Poole–Frenkel effect

Hua Li, Zhiwei Li, Fuchang Lin, et al.
Journal of Electrostatics 71 (6) 958 (2013)
DOI: 10.1016/j.elstat.2013.08.005
Voir cet article

Prediction of dielectric reliability from I–V characteristics: Poole–Frenkel conduction mechanism leading to √E model for silicon nitride MIM capacitor

K.-H. Allers
Microelectronics Reliability 44 (3) 411 (2004)
DOI: 10.1016/j.microrel.2003.12.007
Voir cet article

Implications of advanced modeling on the observation of Poole–Frenkel effect saturation

W.R. Harrell and C. Gopalakrishnan
Thin Solid Films 405 (1-2) 205 (2002)
DOI: 10.1016/S0040-6090(01)01752-7
Voir cet article

The problem of deriving the field-induced thermal emission in Poole-Frenkel theories

R. Ongaro and A. Pillonnet
Radiation Effects and Defects in Solids 124 (3) 289 (1992)
DOI: 10.1080/10420159208220202
Voir cet article

Investigations of Electrical and Electro-Optical Properties of Liquid Crystal/Copolymer-Clay Nanostructured Systems

Doina Manaila Maximean, Constantin Rosu, Ligia Frunza, et al.
Molecular Crystals and Liquid Crystals 546 (1) 143/[1613] (2011)
DOI: 10.1080/15421406.2011.571946
Voir cet article

Observation of Poole–Frenkel effect saturation in SiO2 and other insulating films

W.R. Harrell and J. Frey
Thin Solid Films 352 (1-2) 195 (1999)
DOI: 10.1016/S0040-6090(99)00344-2
Voir cet article

Limitations of Poole–Frenkel Conduction in Bilayer $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ MOS Devices

Richard G Southwick, Justin Reed, Christopher Buu, et al.
IEEE Transactions on Device and Materials Reliability 10 (2) 201 (2010)
DOI: 10.1109/TDMR.2009.2039215
Voir cet article

Charge Transport Mechanisms in a Pb2P2Se6 Semiconductor

Svetlana S. Kostina, Micah P. Hanson, Peng L. Wang, et al.
ACS Photonics 3 (10) 1877 (2016)
DOI: 10.1021/acsphotonics.6b00396
Voir cet article

Synthetic representations of the Poole Frenkel (PF) and Poole regimes

A. Pillonnet and R. Ongaro
Revue de Physique Appliquée 25 (2) 229 (1990)
DOI: 10.1051/rphysap:01990002502022900
Voir cet article

Generalized Poole Frenkel (PF) effect with donors distributed in energy

R. Ongaro and A. Pillonnet
Revue de Physique Appliquée 24 (12) 1097 (1989)
DOI: 10.1051/rphysap:0198900240120109700
Voir cet article

Failure of Arrhenius plots for investigation of localized levels

R. Ongaro and A. Pillonnet
Revue de Physique Appliquée 25 (2) 209 (1990)
DOI: 10.1051/rphysap:01990002502020900
Voir cet article

Conduction mechanisms in hydrogenated amorphous silicon carbide

Bernhard Leitl, Gerhard Schmidt, Gregor Pobegen, Peter Knoll and Heinz Krenn
Journal of Non-Crystalline Solids 528 119750 (2020)
DOI: 10.1016/j.jnoncrysol.2019.119750
Voir cet article

Poole–Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta2O5-MnO2 Capacitors

Q. F. Pan and Q. Liu
Advances in Materials Science and Engineering 2019 1 (2019)
DOI: 10.1155/2019/1690378
Voir cet article

Raman evidence for absence of phase transitions in negative differential resistance thin film devices of niobium dioxide

Ali Fakih, Onkar Shinde, Johan Biscaras and Abhay Shukla
Journal of Applied Physics 127 (8) 084503 (2020)
DOI: 10.1063/1.5140543
Voir cet article