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Electron mobility in n-type Hg1−xCdxTe and Hg1−xZnx Te alloys

J.D. Patterson, Wafaa A. Gobba and S.L. Lehoczky
Journal of Materials Research 7 (8) 2211 (1992)
DOI: 10.1557/JMR.1992.2211
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Thermal Expansion Coefficient and Bond Strength in Hg1−xCdxTe and Hg1−xZnxTe

D. Bagot, R. Granger and S. Rolland
physica status solidi (b) 177 (2) 295 (1993)
DOI: 10.1002/pssb.2221770205
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Atomic Structure of Acceptors in Cd0.22Hg0.78Te: Discrimination between Vacancies and Ions Based on Positron Lifetime and Hall Data

L. Baroux, C. Corbel, F. M. Kiessling, et al.
Physical Review Letters 75 (3) 557 (1995)
DOI: 10.1103/PhysRevLett.75.557
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Angle resolved X-ray photoelectron spectroscopy of the surface of Hg0.85Zn0.15Te and after passivation processes

A. Quemerais, K.H. Khelladi, D. Lemoine, R. Granger and R. Triboulet
Journal of Crystal Growth 138 (1-4) 934 (1994)
DOI: 10.1016/0022-0248(94)90934-2
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Impact of α-particles on the nearest-neighbour environment in CdxHg1 –xTe surface layers

Dmitriy I. Bidnyk and Sergey P. Kostenko
J. Mater. Chem. 2 (1) 19 (1992)
DOI: 10.1039/JM9920200019
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Acceptor Level in Narrow Gap Hg1−xZnx Te

A. Seyni, R. Granger, R. Triboulet, S. Rolland and A. Lasbley
Physica Status Solidi (a) 128 (1) K27 (1991)
DOI: 10.1002/pssa.2211280135
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Internal Precipitation in (Hg, Zn) Te

A. Lasbley, A. Seyni, C. Pelletier, R. Granger and R. Triboulet
Physica Status Solidi (a) 123 (1) 227 (1991)
DOI: 10.1002/pssa.2211230122
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Electrical characterization of the p-Hg1−xZnxTe interface after anodic sulfidization treatments

O. Rousière, D. Lemoine, A. Quémerais, et al.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4) 2300 (1998)
DOI: 10.1116/1.581344
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Near room-temperature IR photo-detectors

J. Piotrowski, W. Galus and M. Grudzien
Infrared Physics 31 (1) 1 (1991)
DOI: 10.1016/0020-0891(91)90037-G
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The Travelling Heater Method (THM) for Hg1−xCdxTe and related materials

R. Triboulet
Progress in Crystal Growth and Characterization of Materials 28 (1-2) 85 (1994)
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p-to-n conversion in Hg1−xZnxTe by ion beam milling effect

S. Rolland, R. Granger and R. Triboulet
Journal of Crystal Growth 117 (1-4) 208 (1992)
DOI: 10.1016/0022-0248(92)90746-6
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Study of p-to-n-type conversion in bulk Hg1-xZnxTe near x = 0.15

R. Granger, A. Lasbley, A. Seyni, S. Rolland and R. Triboulet
Journal of Crystal Growth 101 (1-4) 241 (1990)
DOI: 10.1016/0022-0248(90)90974-P
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Methods for magnetotransport characterization of IR detector materials

J R Meyer, C A Hoffman, F J Bartoli, et al.
Semiconductor Science and Technology 8 (6S) 805 (1993)
DOI: 10.1088/0268-1242/8/6S/004
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Optical characterization of electrochemically grown anodic oxide on Hg0.85Zn0.15Te

O Castaing, R Granger, J T Benhlal, et al.
Semiconductor Science and Technology 10 (7) 983 (1995)
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P-to-n conversion in

S Rolland, K Karrari, R Granger and R Triboulet
Semiconductor Science and Technology 14 (4) 335 (1999)
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Low-temperature specific heat in Hg0.88Zn0.12Te

D Bagot, S Rolland, R Triboulet and R Granger
Semiconductor Science and Technology 8 (5) 638 (1993)
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Optical vibration modes in Hg1-xZnxTe solid solutions near q=0

G. Le Bastard, R. Granger, S. Rolland, Y. Marqueton and R. Triboulet
Journal de Physique 50 (21) 3223 (1989)
DOI: 10.1051/jphys:0198900500210322300
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