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High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

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Applied Physics Letters 64 (6) 690 (1994)
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Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy

B. Lambert, Y. Toudic, Y. Rouillard, et al.
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Determination of the Sb composition profile in MBE-grown GaSb/GaAs structures by high-resolution X-ray diffractometry

O. Brandt, E. Tournié, L. Tapfer and K. Ploog
Journal of Crystal Growth 127 (1-4) 503 (1993)
https://doi.org/10.1016/0022-0248(93)90670-R

Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE

B. Lambert, Y. Toudic, Y. Rouillard, et al.
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On the formation of edge dislocations in InxGa1−xAs/GaAs heterostructures withx< 0·20

C. Ulhaq-Bouillet and A. Lefebvre
Philosophical Magazine A 68 (6) 1273 (1993)
https://doi.org/10.1080/01418619308222931

Structure of GaAs=GaSb incoherent interface after epitaxial growth

A. Bourret and P. H. Fuoss
Applied Physics Letters 61 (9) 1034 (1992)
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Couche épitaxique mince sur un substrat semi-infini: Role du désaccord paramétrique et de l'épaisseur sur les distortions élastiques

R. Bonnet and J. L. Verger-Gaugry
Philosophical Magazine A 66 (5) 849 (1992)
https://doi.org/10.1080/01418619208201594

GaSb/GaAs heteroepitaxy characterized as a stress-free system

Claude Raisin, André Rocher, Georges Landa, Robert Carles and Louis Lassabatere
Applied Surface Science 50 (1-4) 434 (1991)
https://doi.org/10.1016/0169-4332(91)90213-4