Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification C. Lejeune, J.P. Grandchamp, J.P. Gilles, E. Collard et P. ScheiblinRev. Phys. Appl. (Paris), 24 3 (1989) 295-308DOI: https://doi.org/10.1051/rphysap:01989002403029500
