Rev. Phys. Appl. (Paris) 13, 821-824 (1978)
DOI: 10.1051/rphysap:019780013012082100

Charge transport in oxygen-doped polysilicon layers on Si

J.F. Verwey, W. Ruis and I. Sens

Philips Research Laboratories Eindhoven, The Netherlands

Abstract
It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation of underlying p-n junctions. The conduction mechanism was derived from measurements in layers directly deposited on to silicon crystals. At room temperature we found Poole-Frenkel conduction changing at higher temperatures, presumably, to hopping in localized states.

Résumé
On montre que les couches minces de silicium polycristallin dopé avec de l'oxygène (polydox) peuvent être utilisées pour la passivation des jonctions p-n au-dessous des couches. Le mécanisme de la conduction est dérivé des mesures dans les couches minces déposées directement sur les cristaux de silicium. A la température ambiante on trouve une conduction Poole-Frenkel et à une température plus haute on a probablement une conduction par les sauts d'un piège localisé à l'autre.

PACS
7220H - High field transport and nonlinear effects semiconductors/insulators.
7280C - Electrical conductivity of elemental semiconductors.
7340L - Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctions.
7360F - Electronic properties of semiconductor thin films.
8160C - Surface treatment and degradation in semiconductor technology.
2520C - Elemental semiconductors.
2530B - Semiconductor junctions.
2550E - Surface treatment semiconductor technology.

Key words
electronic conduction in crystalline semiconductor thin films -- elemental semiconductors -- oxygen -- p n homojunctions -- passivation -- Poole Frenkel effect -- silicon -- Si -- passivation -- p n junctions -- polydox -- charge transport -- Poole Frenkel conduction -- O doped poly Si layers