Revue de Physique Appliquée

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Foreword

Foreword p. R3

M. Savelli et J.P. Nougier

DOI: https://doi.org/10.1051/rphysap:0197800130120R300

Opening adresses p. 585

DOI: https://doi.org/10.1051/rphysap:019780013012058500

Trends in silicon technology and device research p. 587

J. Borel

DOI: https://doi.org/10.1051/rphysap:019780013012058700

Static and high frequency modelling of vertical channel mos transistor (V.MOS) p. 591

P. Rossel, G. Guegan, H. Martinot et M. Zamorano

DOI: https://doi.org/10.1051/rphysap:019780013012059100

Modelling of Hfe avalanche degradation in gate controlled bipolar transistors p. 597

Ph. Roux, J.P. Dom, Ph. Cazenave et P. Nouel

DOI: https://doi.org/10.1051/rphysap:019780013012059700

Dynamic self-biasing of the floating substrate of the sos transistor p. 603

P. Schwob, M. Villoz, C.E. Jaquet et M. E. Roulet

DOI: https://doi.org/10.1051/rphysap:019780013012060300

A model of the leakage current in n-channel silicon-on-sapphire most's p. 609

P. Gentil

DOI: https://doi.org/10.1051/rphysap:019780013012060900

Profiles of recombination and transport parameters in thin sos films p. 615

S. Cristoloveanu, A. Chovet et G. Kamarinos

DOI: https://doi.org/10.1051/rphysap:019780013012061500

Hot electrons injection into the oxide of a silicon-on-sapphire igfet at low operating voltage p. 619

M. Garrigues, Y. Hellouin, T. Pedron et J.J. Urgell

DOI: https://doi.org/10.1051/rphysap:019780013012061900

R.F. sputtered amorphous silicon schottky Barrier solar cells p. 625

M. J. Thompson, J. Allison, M. M. Al-Kaisi et I.P. Thomas

DOI: https://doi.org/10.1051/rphysap:019780013012062500

Internal quantum efficiency of back illuminated n+ pp + solar cells p. 629

A. Luque, J. Eguren et J. Del Alamo

DOI: https://doi.org/10.1051/rphysap:019780013012062900

Recombination processes in Al2o3-InSb structures p. 633

G. Boucharlat, G. Kamarinos, P. Viktorovitch et B. Munier

DOI: https://doi.org/10.1051/rphysap:019780013012063300

Indium antimonide infrared imaging C.I.D. linear and matrix arrays p. 637

J.P. Chatard, A. Lussereau, A. Salaville, M. Sirieix, D. Esteve, J.J. Simonne, J. Farre et J. Rahobisoa

DOI: https://doi.org/10.1051/rphysap:019780013012063700

Amorphous silicon on p-type crystalline silicon heterojunction p. 641

A.K. Aboul-Seoud et O. Mokhtar

DOI: https://doi.org/10.1051/rphysap:019780013012064100

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating p. 645

J.M. Peransin, J.F. Bresse, J. Michel, A. Boyer et E. Groubert

DOI: https://doi.org/10.1051/rphysap:019780013012064500

Gunn domain existence in the channel of a saturated GaAs MESFET p. 651

P. Bonjour, R. Castagne et J.P. Courat

DOI: https://doi.org/10.1051/rphysap:019780013012065100

Substrate and interface effects in GaAs fet's p. 655

H. Tranduc, P. Rossel, J. Graffeuil, C. Azizi, G. Nuzillat et G. Bert

DOI: https://doi.org/10.1051/rphysap:019780013012065500

Properties of Ga1-yAlyAs 1-xSbx/GaAs1- xSbx double heterojunction electroluminescent diodes p. 661

J. Varon, M. C. Boissy et J. Lebailly

DOI: https://doi.org/10.1051/rphysap:019780013012066100

Direct stepping on wafers p. 667

P. Parrens et P. Tigreat

DOI: https://doi.org/10.1051/rphysap:019780013012066700

Analysis of weak avalanche multiplication in collector junctions. Avalanche injection measurements on standard transistors like devices p. 673

O.A. Bonnaud, J.P. Chante et J.J. Urgell

DOI: https://doi.org/10.1051/rphysap:019780013012067300

Distribution and role of N—H and Si—H bonds in mnos structures p. 679

G. Stubnya, I.C. Szép, G. Hoffmann, Zs. Horváth et P. Tüttö

DOI: https://doi.org/10.1051/rphysap:019780013012067900

An approximate two-dimensional transient analysis of charge transport in a buried-channel charge-coupled device p. 683

R.S. Ferguson et W.D. Ryan

DOI: https://doi.org/10.1051/rphysap:019780013012068300

Analysis of frequency response and noise of CCD structures p. 691

S. Donati et F. Montecchi

DOI: https://doi.org/10.1051/rphysap:019780013012069100

The overlaid CCD : a bulk-integrated double-channel charge-coupled device p. 697

R.M. Barsan

DOI: https://doi.org/10.1051/rphysap:019780013012069700

The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma p. 701

K.-M. Eisele

DOI: https://doi.org/10.1051/rphysap:019780013012070100

Precision electron beam exposure system, EB52 p. 705

G. Tatsuno, M. Fujinami, A. Iwata et K. Kinamari

DOI: https://doi.org/10.1051/rphysap:019780013012070500

Production of submicronstructures in highly conductive substrates p. 709

H.A.M. van den Berg

DOI: https://doi.org/10.1051/rphysap:019780013012070900

n-Type silicon at 77 K : hot carrier noise and not generation recombination noise p. 715

J.P. Nougier, D. Gasquet et J.C. Vaissiere

DOI: https://doi.org/10.1051/rphysap:019780013012071500

Shot noise behaviour of subthreshold MOS transistors p. 719

J. Fellrath

DOI: https://doi.org/10.1051/rphysap:019780013012071900

Static induction thyristor p. 725

J. Nishizawa et K. Nakamura

DOI: https://doi.org/10.1051/rphysap:019780013012072500

On the influence of recombination centers on the electrical performance of silicon power rectifiers p. 729

M. Derdouri et A. Muñoz-Yagüe

DOI: https://doi.org/10.1051/rphysap:019780013012072900

Electrical characterization of sipos mesa power transistors electric field repartition in the collector-base junction p. 733

J.F. Bresse, E. Khalil, M. Savelli, J.B. Quoirin et A. Peyre-Lavigne

DOI: https://doi.org/10.1051/rphysap:019780013012073300

The turn off time of high voltage epitaxial transistors p. 737

G.P. Chiavarotti, M. Conti et S. Luciani

DOI: https://doi.org/10.1051/rphysap:019780013012073700

Observations on residual donors in GaP LPE p. 741

J. Pfeifer, B. Pödör, L. Csontos et N. Nádor

DOI: https://doi.org/10.1051/rphysap:019780013012074100

Growth of CuInS2 and its characterization p. 745

H.L. Hwang, C.Y. Sun, C.Y. Leu, C.L. Cheng et C.C. Tu

DOI: https://doi.org/10.1051/rphysap:019780013012074500

Pb0.8Sn0.2Te Infrared photodiodes by indium implantation p. 753

Th. Jakobus, W. Rothemund, A. Hurrle et J. Baars

DOI: https://doi.org/10.1051/rphysap:019780013012075300

Physical and electrical properties of In2O3 : Sn films. Applications to optoelectronic devices p. 757

J.F. Bresse et J.C. Manifacier

DOI: https://doi.org/10.1051/rphysap:019780013012075700

Influence of the epilayer properties on breakdown voltage and noise behaviour of GaAs MESFETs p. 761

C. Tsironis

DOI: https://doi.org/10.1051/rphysap:019780013012076100

The characterisation of metal-thin insulator-n-p+ silicon switching devices p. 767

J. Buxo, A.E. Owen, G. Sarrabayrouse et J.P. Sebaa

DOI: https://doi.org/10.1051/rphysap:019780013012076700

Implications of the interface effects in the normally-off type GaAs MESFETs p. 771

G. Bert et G. Nuzillat

DOI: https://doi.org/10.1051/rphysap:019780013012077100

I-V characteristics of polycrystalline silicon resistors p. 777

G. Baccarani, M. Impronta, B. Riccò et P. Ferla

DOI: https://doi.org/10.1051/rphysap:019780013012077700

Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs p. 783

H. Bruch, H. Martini, K.-H. Bachem et P. Balk

DOI: https://doi.org/10.1051/rphysap:019780013012078300

Method of characterization of complex and degenerated epitaxial structures from analysis of magnetoresistance oscillations p. 787

R.L. Aulombard, C. Bousquet, C. Bernard-Merlet, A. Raymond, J.L. Robert, P. Rub et C. Picoche

DOI: https://doi.org/10.1051/rphysap:019780013012078700

Transmission electron microscopical imaging of lateral implantation effects near mask edges in B+-implanted Si wafers p. 791

E.F. Krimmel, H. Oppolzer et H. Runge

DOI: https://doi.org/10.1051/rphysap:019780013012079100

Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults p. 797

C.L. Claeys, G.J. Declerck et R.J. van Overstrateten

DOI: https://doi.org/10.1051/rphysap:019780013012079700

Correlation of crystal defects and bipolar device behaviour p. 803

D. Kranzer, R. Lemme, B.O. Kolbesen, K.R. Mayer et H. Strunk

DOI: https://doi.org/10.1051/rphysap:019780013012080300

Minority carriers lifetime degradation during ion implanted silicon solar cell processing p. 809

M. Finetti, P. Ostoja, S. Solmi et G. Soncini

DOI: https://doi.org/10.1051/rphysap:019780013012080900

Non destructive testing of electronic devices by acoustic microscopy p. 815

J. Attal et G. Cambon

DOI: https://doi.org/10.1051/rphysap:019780013012081500

Charge transport in oxygen-doped polysilicon layers on Si p. 821

J.F. Verwey, W. Ruis et I. Sens

DOI: https://doi.org/10.1051/rphysap:019780013012082100

High-temperature hydrogen anneal of mnos structures p. 825

G. Schols, H. Maes, G. Declerck et R. van Overstraeten

DOI: https://doi.org/10.1051/rphysap:019780013012082500

Maos non-volatile memory structures with lower bandgap storage layer p. 829

F. Stephany, M. Schumacher et P. Balk

DOI: https://doi.org/10.1051/rphysap:019780013012082900

Degradation of MIOS memory structures p. 833

A. El-Dessouky et P. Balk

DOI: https://doi.org/10.1051/rphysap:019780013012083300

A new experimental method for studying the capture process of hot electrons in SiO2 p. 837

K. Erdelyi et P. Schvan

DOI: https://doi.org/10.1051/rphysap:019780013012083700

The neutralization of Na+ ions in HCl grown SiO2 p. 841

J.P. Stagg et M. R. Boudry

DOI: https://doi.org/10.1051/rphysap:019780013012084100

An advanced processing technology for high voltage bipolar IC's p. 845

M. Roche

DOI: https://doi.org/10.1051/rphysap:019780013012084500

Détermination ultrasonore des propriétés élastiques et anélastiques en fonction de la fraction volumique des amas de Guinier-Preston dans des alliages aluminium-magnésium p. 853

C. Gault, A. Dauger et J. Wehr

DOI: https://doi.org/10.1051/rphysap:019780013012085300

Propriétés spectroscopiques et effet laser d'un verre tellurite et d'un verre phosphate fortement dopés en néodyme p. 859

J.C. Michel, D. Morin et F. Auzel

DOI: https://doi.org/10.1051/rphysap:019780013012085900

Fluage des phases β et β' d'un alliage Cu-Zn équiatomique. Influence de l'ordre p. 867

P. Delobelle, P. Druot, A. Mermet et C. Oytana

DOI: https://doi.org/10.1051/rphysap:019780013012086700

Mesure de la vitesse de déplacement d'un arc de coupure sur une electrode plane p. 873

P. Andanson, A. Lefort et J. Roche

DOI: https://doi.org/10.1051/rphysap:019780013012087300

Mesure de la diffusivité de céramiques frittées, par une méthode flash, en impulsion négative, le chauffage étant assuré par un jet de plasma p. 877

M. F. Elchinger, C. Martin et P. Fauchais

DOI: https://doi.org/10.1051/rphysap:019780013012087700