Free Access Foreword Foreword p. R3 M. Savelli and J.P. Nougier DOI: https://doi.org/10.1051/rphysap:0197800130120R300 PDF (38.90 KB)
Trends in silicon technology and device research p. 587 J. Borel DOI: https://doi.org/10.1051/rphysap:019780013012058700 PDF (424.9 KB)References
Static and high frequency modelling of vertical channel mos transistor (V.MOS) p. 591 P. Rossel, G. Guegan, H. Martinot and M. Zamorano DOI: https://doi.org/10.1051/rphysap:019780013012059100 PDF (882.2 KB)References
Modelling of Hfe avalanche degradation in gate controlled bipolar transistors p. 597 Ph. Roux, J.P. Dom, Ph. Cazenave and P. Nouel DOI: https://doi.org/10.1051/rphysap:019780013012059700 PDF (761.3 KB)References
Dynamic self-biasing of the floating substrate of the sos transistor p. 603 P. Schwob, M. Villoz, C.E. Jaquet and M. E. Roulet DOI: https://doi.org/10.1051/rphysap:019780013012060300 PDF (788.4 KB)References
A model of the leakage current in n-channel silicon-on-sapphire most's p. 609 P. Gentil DOI: https://doi.org/10.1051/rphysap:019780013012060900 PDF (690.4 KB)References
Profiles of recombination and transport parameters in thin sos films p. 615 S. Cristoloveanu, A. Chovet and G. Kamarinos DOI: https://doi.org/10.1051/rphysap:019780013012061500 PDF (640.4 KB)References
Hot electrons injection into the oxide of a silicon-on-sapphire igfet at low operating voltage p. 619 M. Garrigues, Y. Hellouin, T. Pedron and J.J. Urgell DOI: https://doi.org/10.1051/rphysap:019780013012061900 PDF (832.7 KB)References
R.F. sputtered amorphous silicon schottky Barrier solar cells p. 625 M. J. Thompson, J. Allison, M. M. Al-Kaisi and I.P. Thomas DOI: https://doi.org/10.1051/rphysap:019780013012062500 PDF (586.9 KB)References
Internal quantum efficiency of back illuminated n+ pp + solar cells p. 629 A. Luque, J. Eguren and J. Del Alamo DOI: https://doi.org/10.1051/rphysap:019780013012062900 PDF (596.3 KB)References
Recombination processes in Al2o3-InSb structures p. 633 G. Boucharlat, G. Kamarinos, P. Viktorovitch and B. Munier DOI: https://doi.org/10.1051/rphysap:019780013012063300 PDF (425.4 KB)References
Indium antimonide infrared imaging C.I.D. linear and matrix arrays p. 637 J.P. Chatard, A. Lussereau, A. Salaville, M. Sirieix, D. Esteve, J.J. Simonne, J. Farre and J. Rahobisoa DOI: https://doi.org/10.1051/rphysap:019780013012063700 PDF (907.1 KB)References
Amorphous silicon on p-type crystalline silicon heterojunction p. 641 A.K. Aboul-Seoud and O. Mokhtar DOI: https://doi.org/10.1051/rphysap:019780013012064100 PDF (541.0 KB)References
Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating p. 645 J.M. Peransin, J.F. Bresse, J. Michel, A. Boyer and E. Groubert DOI: https://doi.org/10.1051/rphysap:019780013012064500 PDF (678.7 KB)References
Gunn domain existence in the channel of a saturated GaAs MESFET p. 651 P. Bonjour, R. Castagne and J.P. Courat DOI: https://doi.org/10.1051/rphysap:019780013012065100 PDF (510.1 KB)References
Substrate and interface effects in GaAs fet's p. 655 H. Tranduc, P. Rossel, J. Graffeuil, C. Azizi, G. Nuzillat and G. Bert DOI: https://doi.org/10.1051/rphysap:019780013012065500 PDF (546.4 KB)References
Properties of Ga1-yAlyAs 1-xSbx/GaAs1- xSbx double heterojunction electroluminescent diodes p. 661 J. Varon, M. C. Boissy and J. Lebailly DOI: https://doi.org/10.1051/rphysap:019780013012066100 PDF (2.390 MB)References
Direct stepping on wafers p. 667 P. Parrens and P. Tigreat DOI: https://doi.org/10.1051/rphysap:019780013012066700 PDF (2.183 MB)References
Analysis of weak avalanche multiplication in collector junctions. Avalanche injection measurements on standard transistors like devices p. 673 O.A. Bonnaud, J.P. Chante and J.J. Urgell DOI: https://doi.org/10.1051/rphysap:019780013012067300 PDF (524.9 KB)References
Distribution and role of N—H and Si—H bonds in mnos structures p. 679 G. Stubnya, I.C. Szép, G. Hoffmann, Zs. Horváth and P. Tüttö DOI: https://doi.org/10.1051/rphysap:019780013012067900 PDF (613.2 KB)References
An approximate two-dimensional transient analysis of charge transport in a buried-channel charge-coupled device p. 683 R.S. Ferguson and W.D. Ryan DOI: https://doi.org/10.1051/rphysap:019780013012068300 PDF (1010 KB)References
Analysis of frequency response and noise of CCD structures p. 691 S. Donati and F. Montecchi DOI: https://doi.org/10.1051/rphysap:019780013012069100 PDF (825.1 KB)References
The overlaid CCD : a bulk-integrated double-channel charge-coupled device p. 697 R.M. Barsan DOI: https://doi.org/10.1051/rphysap:019780013012069700 PDF (690.6 KB)References
The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma p. 701 K.-M. Eisele DOI: https://doi.org/10.1051/rphysap:019780013012070100 PDF (416.3 KB)References
Precision electron beam exposure system, EB52 p. 705 G. Tatsuno, M. Fujinami, A. Iwata and K. Kinamari DOI: https://doi.org/10.1051/rphysap:019780013012070500 PDF (482.4 KB)References
Production of submicronstructures in highly conductive substrates p. 709 H.A.M. van den Berg DOI: https://doi.org/10.1051/rphysap:019780013012070900 PDF (630.7 KB)References
n-Type silicon at 77 K : hot carrier noise and not generation recombination noise p. 715 J.P. Nougier, D. Gasquet and J.C. Vaissiere DOI: https://doi.org/10.1051/rphysap:019780013012071500 PDF (431.7 KB)References
Shot noise behaviour of subthreshold MOS transistors p. 719 J. Fellrath DOI: https://doi.org/10.1051/rphysap:019780013012071900 PDF (545.1 KB)References
Static induction thyristor p. 725 J. Nishizawa and K. Nakamura DOI: https://doi.org/10.1051/rphysap:019780013012072500 PDF (543.9 KB)References
On the influence of recombination centers on the electrical performance of silicon power rectifiers p. 729 M. Derdouri and A. Muñoz-Yagüe DOI: https://doi.org/10.1051/rphysap:019780013012072900 PDF (556.3 KB)References
Electrical characterization of sipos mesa power transistors electric field repartition in the collector-base junction p. 733 J.F. Bresse, E. Khalil, M. Savelli, J.B. Quoirin and A. Peyre-Lavigne DOI: https://doi.org/10.1051/rphysap:019780013012073300 PDF (621.1 KB)References
The turn off time of high voltage epitaxial transistors p. 737 G.P. Chiavarotti, M. Conti and S. Luciani DOI: https://doi.org/10.1051/rphysap:019780013012073700 PDF (559.7 KB)References
Observations on residual donors in GaP LPE p. 741 J. Pfeifer, B. Pödör, L. Csontos and N. Nádor DOI: https://doi.org/10.1051/rphysap:019780013012074100 PDF (576.6 KB)References
Growth of CuInS2 and its characterization p. 745 H.L. Hwang, C.Y. Sun, C.Y. Leu, C.L. Cheng and C.C. Tu DOI: https://doi.org/10.1051/rphysap:019780013012074500 PDF (999.2 KB)References
Pb0.8Sn0.2Te Infrared photodiodes by indium implantation p. 753 Th. Jakobus, W. Rothemund, A. Hurrle and J. Baars DOI: https://doi.org/10.1051/rphysap:019780013012075300 PDF (697.2 KB)References
Physical and electrical properties of In2O3 : Sn films. Applications to optoelectronic devices p. 757 J.F. Bresse and J.C. Manifacier DOI: https://doi.org/10.1051/rphysap:019780013012075700 PDF (490.7 KB)References
Influence of the epilayer properties on breakdown voltage and noise behaviour of GaAs MESFETs p. 761 C. Tsironis DOI: https://doi.org/10.1051/rphysap:019780013012076100 PDF (680.7 KB)References
The characterisation of metal-thin insulator-n-p+ silicon switching devices p. 767 J. Buxo, A.E. Owen, G. Sarrabayrouse and J.P. Sebaa DOI: https://doi.org/10.1051/rphysap:019780013012076700 PDF (683.8 KB)References
Implications of the interface effects in the normally-off type GaAs MESFETs p. 771 G. Bert and G. Nuzillat DOI: https://doi.org/10.1051/rphysap:019780013012077100 PDF (625.7 KB)References
I-V characteristics of polycrystalline silicon resistors p. 777 G. Baccarani, M. Impronta, B. Riccò and P. Ferla DOI: https://doi.org/10.1051/rphysap:019780013012077700 PDF (708.2 KB)References
Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs p. 783 H. Bruch, H. Martini, K.-H. Bachem and P. Balk DOI: https://doi.org/10.1051/rphysap:019780013012078300 PDF (466.3 KB)References
Method of characterization of complex and degenerated epitaxial structures from analysis of magnetoresistance oscillations p. 787 R.L. Aulombard, C. Bousquet, C. Bernard-Merlet, A. Raymond, J.L. Robert, P. Rub and C. Picoche DOI: https://doi.org/10.1051/rphysap:019780013012078700 PDF (485.8 KB)References
Transmission electron microscopical imaging of lateral implantation effects near mask edges in B+-implanted Si wafers p. 791 E.F. Krimmel, H. Oppolzer and H. Runge DOI: https://doi.org/10.1051/rphysap:019780013012079100 PDF (914.5 KB)References
Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults p. 797 C.L. Claeys, G.J. Declerck and R.J. van Overstrateten DOI: https://doi.org/10.1051/rphysap:019780013012079700 PDF (841.3 KB)References
Correlation of crystal defects and bipolar device behaviour p. 803 D. Kranzer, R. Lemme, B.O. Kolbesen, K.R. Mayer and H. Strunk DOI: https://doi.org/10.1051/rphysap:019780013012080300 PDF (1.227 MB)References
Minority carriers lifetime degradation during ion implanted silicon solar cell processing p. 809 M. Finetti, P. Ostoja, S. Solmi and G. Soncini DOI: https://doi.org/10.1051/rphysap:019780013012080900 PDF (723.0 KB)References
Non destructive testing of electronic devices by acoustic microscopy p. 815 J. Attal and G. Cambon DOI: https://doi.org/10.1051/rphysap:019780013012081500 PDF (1.467 MB)References
Charge transport in oxygen-doped polysilicon layers on Si p. 821 J.F. Verwey, W. Ruis and I. Sens DOI: https://doi.org/10.1051/rphysap:019780013012082100 PDF (413.1 KB)References
High-temperature hydrogen anneal of mnos structures p. 825 G. Schols, H. Maes, G. Declerck and R. van Overstraeten DOI: https://doi.org/10.1051/rphysap:019780013012082500 PDF (595.5 KB)References
Maos non-volatile memory structures with lower bandgap storage layer p. 829 F. Stephany, M. Schumacher and P. Balk DOI: https://doi.org/10.1051/rphysap:019780013012082900 PDF (470.8 KB)References
Degradation of MIOS memory structures p. 833 A. El-Dessouky and P. Balk DOI: https://doi.org/10.1051/rphysap:019780013012083300 PDF (489.5 KB)References
A new experimental method for studying the capture process of hot electrons in SiO2 p. 837 K. Erdelyi and P. Schvan DOI: https://doi.org/10.1051/rphysap:019780013012083700 PDF (474.0 KB)References
The neutralization of Na+ ions in HCl grown SiO2 p. 841 J.P. Stagg and M. R. Boudry DOI: https://doi.org/10.1051/rphysap:019780013012084100 PDF (517.7 KB)References
An advanced processing technology for high voltage bipolar IC's p. 845 M. Roche DOI: https://doi.org/10.1051/rphysap:019780013012084500 PDF (775.8 KB)References
Détermination ultrasonore des propriétés élastiques et anélastiques en fonction de la fraction volumique des amas de Guinier-Preston dans des alliages aluminium-magnésium p. 853 C. Gault, A. Dauger and J. Wehr DOI: https://doi.org/10.1051/rphysap:019780013012085300 PDF (808.2 KB)References
Propriétés spectroscopiques et effet laser d'un verre tellurite et d'un verre phosphate fortement dopés en néodyme p. 859 J.C. Michel, D. Morin and F. Auzel DOI: https://doi.org/10.1051/rphysap:019780013012085900 PDF (1.168 MB)References
Fluage des phases β et β' d'un alliage Cu-Zn équiatomique. Influence de l'ordre p. 867 P. Delobelle, P. Druot, A. Mermet and C. Oytana DOI: https://doi.org/10.1051/rphysap:019780013012086700 PDF (950.8 KB)References
Mesure de la vitesse de déplacement d'un arc de coupure sur une electrode plane p. 873 P. Andanson, A. Lefort and J. Roche DOI: https://doi.org/10.1051/rphysap:019780013012087300 PDF (608.8 KB)References
Mesure de la diffusivité de céramiques frittées, par une méthode flash, en impulsion négative, le chauffage étant assuré par un jet de plasma p. 877 M. F. Elchinger, C. Martin and P. Fauchais DOI: https://doi.org/10.1051/rphysap:019780013012087700 PDF (1.337 MB)References
