Rev. Phys. Appl. (Paris) 13, 697-700 (1978)
DOI: 10.1051/rphysap:019780013012069700

The overlaid CCD : a bulk-integrated double-channel charge-coupled device

R.M. Barsan

Research Institute for Electronic Components, Str. Erou Iancu Nicolae 32B, Bucharest 72996, Romania

Abstract
A novel charge-coupled device structure operating by transferring charge packets on two distinct levels which are overlaid in the semiconductor bulk is described and analysed. This bulk-integrated device is twice as compact and has a reduced driving power consumption per bit, compared to conventional buried-channel CCD's, still enjoying bulk-channel operation. Furthermore, the overlaid CCD can be employed to perform certain operations that could otherwise be performed only at greater expense. The penalty is a smaller charge-carrying capacity of the deeper-laying transfer level.

Résumé
On présente une nouvelle structure de dispositif à couplage de charge qui contient deux canaux de transfert superposés dans le volume du semiconducteur. Grâce à cette façon verticale d'intégration (en volume), ce dispositif jouit d'une densité double de stockage et d'un nécessaire plus bas d'énergie de commande, par rapport aux dispositifs à canal enterré conventionnels. Le prix de ces avantages est une capacité limitée de déplacement de charge du niveau de transfert profond.

PACS
2560S - Other field effect devices.

Key words
charge coupled devices -- overlaid CCD -- charge packets -- driving power consumption -- bulk integrated double channel charge coupled device -- charge carrying capacity -- semiconductor device