Numéro |
Rev. Phys. Appl. (Paris)
Volume 9, Numéro 3, mai 1974
|
|
---|---|---|
Page(s) | 575 - 585 | |
DOI | https://doi.org/10.1051/rphysap:0197400903057500 |
Rev. Phys. Appl. (Paris) 9, 575-585 (1974)
DOI: 10.1051/rphysap:0197400903057500
Institut de Physique Nucléaire, BP 1, 91406 Orsay, France
6170T - Doping and implantation of impurities.
6180J - Ion beam effects.
7170C - Crystal and ligand fields.
Key words
crystal hyperfine field interactions -- metals -- ion implantation -- hyperfine interactions -- metals -- radiation damage effects -- angular distribution techniques
DOI: 10.1051/rphysap:0197400903057500
Ion implantation and hyperfine interactions in metals
H. BernasInstitut de Physique Nucléaire, BP 1, 91406 Orsay, France
Abstract
A very simplified description of angular distribution hyperfine interaction techniques is given, with a view to presenting their applications in ion-implantation studies of metals. Some typical experiments are reviewed. The latter part of the paper is devoted to a discussion of radiation damage effects in hyperfine interaction studies after ion-implantation.
Résumé
Présentation simplifiée des techniques radioactives d'interactions hyperfines et application aux études d'implantation ionique dans les métaux. Quelques expériences caractéristiques. Etudes locales d'effets de dommages induits par l'implantation.
6170T - Doping and implantation of impurities.
6180J - Ion beam effects.
7170C - Crystal and ligand fields.
Key words
crystal hyperfine field interactions -- metals -- ion implantation -- hyperfine interactions -- metals -- radiation damage effects -- angular distribution techniques