Rev. Phys. Appl. (Paris) 17, 473-480 (1982)
DOI: 10.1051/rphysap:01982001708047300

New ways to measure the work function difference in MOS structures

S.K. Krawczyk¹, H.M. PrzewLocki² et A. Jakubowski<sup>1

1</sup>  Institute of Electron Technology, Technical University of Warsaw, Koszykowa 75, 00-662 Warsaw, Poland
²  Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Abstract
Two new techniques for contact potential difference determination in MOS structures have been developed. These techniques were applied in practice yielding ΦMS values remaining in close agreement with each other, and within the range of ΦMS values obtained by other authors. These techniques are simple and much easier in application then the commonly used methods of ΦMS determination.

Résumé
On a élaboré deux nouvelles méthodes de détermination du potentiel de contact dans les structures MOS. On a mis ces méthodes en pratique et les valeurs de ΦMS obtenues par elles ainsi que celles d'autres auteurs s'accordent bien. Les méthodes sont simples et plus faciles à appliquer que celles généralement utilisées dans la détermination de Φ MS.

PACS
7330 - Surface double layers, Schottky barriers, and work functions.
7340Q - Electrical properties of metal insulator semiconductor structures.
2530F - Metal insulator semiconductor structures.

Key words
metal insulator semiconductor structures -- work function -- measure -- work function difference -- MOS structures -- contact potential difference