| Numéro |
Rev. Phys. Appl. (Paris)
Volume 24, Numéro 5, mai 1989
|
|
|---|---|---|
| Page(s) | 539 - 543 | |
| DOI | https://doi.org/10.1051/rphysap:01989002405053900 | |
Rev. Phys. Appl. (Paris) 24, 539-543 (1989)
DOI: 10.1051/rphysap:01989002405053900
1 I.N.S.A.-C.N.R.S., 31077 Toulouse, France
2 S.N.C.I.-C.N.R.S., 38042 Grenoble, France
3 Thomson-CSF, LCR, 91401 Orsay, France
7360F - Electronic properties of semiconductor thin films.
7220M - Galvanomagnetic and other magnetotransport effects semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7240 - Photoconduction and photovoltaic effects: photodielectric effects.
2520D - II VI and III V semiconductors.
4210 - Photoconducting materials and properties.
Key words
electronic conduction in crystalline semiconductor thin films -- gallium arsenide -- Hall effect -- III V semiconductors -- semiconductor epitaxial layers -- silicon -- quasibidimensional electronic properties -- magnetoresistance -- Hall density -- doping levels -- photoconductivity -- semiconductor -- high magnetic fields -- accumulation layer -- electric subbands -- GaAs:Si epitaxial layers
DOI: 10.1051/rphysap:01989002405053900
Propriétés électroniques quasi-bidimensionnelles de couches épitaxiales de GaAs à dopage δ
D. Lavielle1, 2, J.C. Portal1, 2, M. Stohr2, S.P. Najda2, A. Briggs2, G. Gillmann3, P. Bois3, E. Barbier3 et B. Vinter31 I.N.S.A.-C.N.R.S., 31077 Toulouse, France
2 S.N.C.I.-C.N.R.S., 38042 Grenoble, France
3 Thomson-CSF, LCR, 91401 Orsay, France
Abstract
We report investigations on electronic properties of Si doped GaAs layers. We used high magnetic fields and low temperatures to characterize the accumulation layer. The bidimensional behavior of the conduction and the présence of several electric subbands are evidenced.
Résumé
Nous présentons ici une étude des propriétés de transport électronique de structures à dopage planaire Si dans GaAs. Nous utilisons des forts champs magnétiques continus et des basses températures pour caractériser la couche d'accumulation. Nous montrons le caractère bidimensionnel de la conduction et la présence de plusieurs sous-bandes.
7360F - Electronic properties of semiconductor thin films.
7220M - Galvanomagnetic and other magnetotransport effects semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7240 - Photoconduction and photovoltaic effects: photodielectric effects.
2520D - II VI and III V semiconductors.
4210 - Photoconducting materials and properties.
Key words
electronic conduction in crystalline semiconductor thin films -- gallium arsenide -- Hall effect -- III V semiconductors -- semiconductor epitaxial layers -- silicon -- quasibidimensional electronic properties -- magnetoresistance -- Hall density -- doping levels -- photoconductivity -- semiconductor -- high magnetic fields -- accumulation layer -- electric subbands -- GaAs:Si epitaxial layers