New ways to measure the work function difference in MOS structures
Rev. Phys. Appl. (Paris), 17 8 (1982) 473-480
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Distributions of electric parameters in MOS structures on 3C-SiC substrate
Krzysztof Piskorski, Henryk Przewlocki, Romain Esteve and Mietek BakowskiOpen Physics 11 (2) (2013)
https://doi.org/10.2478/s11534-012-0116-x
Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures
Krzysztof Piskorski, Henryk M. Przewlocki, Romain Esteve and Mietek BakowskiMaterials Science Forum 711 99 (2012)
https://doi.org/10.4028/www.scientific.net/MSF.711.99
Theory and applications of internal photoemission in the MOS system at low electric fields
Henryk M. PrzewlockiSolid-State Electronics 45 (8) 1241 (2001)
https://doi.org/10.1016/S0038-1101(00)00274-4
Internal photoemission characteristics of metal–insulator–semiconductor structures at low electric fields in the insulator
H. M. PrzewlockiJournal of Applied Physics 85 (9) 6610 (1999)
https://doi.org/10.1063/1.370169
3 1930 (1999)
https://doi.org/10.1109/IMTC.1999.776156
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
H. M. PrzewlockiFundamental Aspects of Ultrathin Dielectrics on Si-based Devices 343 (1998)
https://doi.org/10.1007/978-94-011-5008-8_25
Photoelectric phenomena in metal-insulator-semiconductor structures at low electric fields in the insulator
H. M. PrzewlockiJournal of Applied Physics 78 (4) 2550 (1995)
https://doi.org/10.1063/1.360112
A new method for the work-function difference determination using buried-channel MOS transistors
K. IniewskiIEEE Transactions on Electron Devices 36 (1) 152 (1989)
https://doi.org/10.1109/16.21199
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Hisham Z. Massoud and James D. PlummerThe Physics and Chemistry of SiO2 and the Si-SiO2 Interface 251 (1988)
https://doi.org/10.1007/978-1-4899-0774-5_28
A new method for the simultaneous determination of the surface-carrier mobility and the metal-semiconductor work-function difference in MOS transistors
B. Majkusiak and A. JakubowskiIEEE Transactions on Electron Devices 35 (4) 439 (1988)
https://doi.org/10.1109/16.2477
Silicon work function in AlSiO2Si system
K. PaterSurface Science 200 (2-3) 187 (1988)
https://doi.org/10.1016/0039-6028(88)90519-5
An accurate MOS measurement procedure for work function difference in the Al/SiO2/Si system
W.H. Krautschneider, J. Laschinski, W. Seifert and H.G. WagemannSolid-State Electronics 29 (5) 571 (1986)
https://doi.org/10.1016/0038-1101(86)90080-8
New method of determination of the flat-band voltage in SOI MOS structures
Krzysztof Iniewski and Andrzej JakubowskiSolid-State Electronics 29 (9) 947 (1986)
https://doi.org/10.1016/0038-1101(86)90019-5
The dispersion and instability of the work function difference in MOS structures
S.K. Krawczyk and T. MrabeutPhysica B+C 129 (1-3) 278 (1985)
https://doi.org/10.1016/0378-4363(85)90585-6