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Article cité :
A. Tromson Carli , P. Gibart , R. Druilhe , Y. Monteil , J. Bouix , B. El Jani
Rev. Phys. Appl. (Paris), 20 8 (1985) 569-574
Citations de cet article :
16 articles
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Low-pressure organometallic epitaxy of the III–V compounds
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Growth of InGaAs in a hot-walled vapor phase epitaxy reactor using a trimethylarsenic source
D. N. Buckley Applied Physics Letters 55 (24) 2514 (1989) https://doi.org/10.1063/1.101993
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Y. Monteil, P. Raffin, P. Abraham, R. Favre and J. Bouix NATO ASI Series, Mechanisms of Reactions of Organometallic Compounds with Surfaces 198 169 (1989) https://doi.org/10.1007/978-1-4899-2522-0_20
Metallorganic vapor phase epitaxy reactor for i
n s
i
t
u optical investigations
M. Vaille, R. Favre, Y. Monteil, J. Bouix and P. Gibart Review of Scientific Instruments 59 (1) 167 (1988) https://doi.org/10.1063/1.1139995
Raman investigations on AsH3 decomposition in MOVPE
Y. Monteil, R. Favre, P. Raffin, et al. Journal of Crystal Growth 93 (1-4) 159 (1988) https://doi.org/10.1016/0022-0248(88)90521-0
The use of organic As precursors in the low pressure MOCVD of GaAs
A. Brauers, O. Kayser, R. Kall, et al. Journal of Crystal Growth 93 (1-4) 7 (1988) https://doi.org/10.1016/0022-0248(88)90498-8
Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4
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Limited Reaction Processing: Silicon and III–V Materials
James F. Gibbons, S. Reynolds, C. Gronet, et al. MRS Proceedings 92 (1987) https://doi.org/10.1557/PROC-92-281
Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic
D. W. Vook, S. Reynolds and J. F. Gibbons Applied Physics Letters 50 (19) 1386 (1987) https://doi.org/10.1063/1.97865
Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
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Limited Reaction Processing: Growth of III-V Epitaxial Layers by Rapid Thermal Metalorganic Chemical Vapor Deposition
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Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition
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