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MOVPE growth of III–V compounds for optoelectronic and electronic applications

M. Behet, R. Hövel, A. Kohl, A.Mesquida Küsters, B. Opitz and K. Heime
Microelectronics Journal 27 (4-5) 297 (1996)
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Growth of InGaAs in a hot-walled vapor phase epitaxy reactor using a trimethylarsenic source

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R. M. Lum, J. K. Klingert, D. W. Kisker, et al.
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Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic

D. W. Vook, S. Reynolds and J. F. Gibbons
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R. M. Lum, J. K. Klingert and M. G. Lamont
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S. Reynolds, D. W. Vook and J. F. Gibbons
Applied Physics Letters 49 (25) 1720 (1986)
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