| Issue |
Rev. Phys. Appl. (Paris)
Volume 23, Number 5, mai 1988
|
|
|---|---|---|
| Page(s) | 739 - 746 | |
| DOI | https://doi.org/10.1051/rphysap:01988002305073900 | |
Rev. Phys. Appl. (Paris) 23, 739-746 (1988)
DOI: 10.1051/rphysap:01988002305073900
THOMSON-CSF/T.H.M., Route Départementale 128, B.P. 48, 91401 Orsay Cedex, France
7155F - Impurity and defect levels in tetrahedrally bonded nonmetals.
7220M - Galvanomagnetic and other magnetotransport effects semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7850G - Impurity and defect absorption in semiconductors.
Key words
defect electron energy states -- gallium arsenide -- Hall effect -- III V semiconductors -- impurity and defect absorption spectra of inorganic solids -- semiconductor -- electrical mapping -- ingots -- wafers -- optical mapping -- EL2 distribution -- residual doping level -- GaAs
DOI: 10.1051/rphysap:01988002305073900
EL2 distribution in LEC GaAs ingots and wafers
M. Bonnet, N. Visentin et B. GouterauxTHOMSON-CSF/T.H.M., Route Départementale 128, B.P. 48, 91401 Orsay Cedex, France
Abstract
A combination of electrical and optical mapping experiments has been used to obtain the EL2 distribution patterns in semi-insulating GaAs wafers. The influence of growing conditions such as stoichiometry, mass fraction solidified and moisture in the encapsulant is shown in terms of EL2 uniformity and residual doping level.
Résumé
La distribution du défaut EL2 dans des plaquettes de GaAs semi-isolant a été mesurée par des techniques électriques et optiques. Nous avons également suivi l'influence des conditions de croissance telles que la stoechiométrie, la fraction solidifiée et l'humidité de l'encapsulant sur la distribution de EL2 et des impuretés résiduelles.
7155F - Impurity and defect levels in tetrahedrally bonded nonmetals.
7220M - Galvanomagnetic and other magnetotransport effects semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7850G - Impurity and defect absorption in semiconductors.
Key words
defect electron energy states -- gallium arsenide -- Hall effect -- III V semiconductors -- impurity and defect absorption spectra of inorganic solids -- semiconductor -- electrical mapping -- ingots -- wafers -- optical mapping -- EL2 distribution -- residual doping level -- GaAs