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Cited article:

Passivation de la surface de phosphure d'indium par des éléments de la colonne V

R. Blanchet, P. Viktorovitch, A. Choujaa, J. Chave, C. Santinelli

Rev. Phys. Appl. (Paris), 22 5 (1987) 279-284

DOI: https://doi.org/10.1051/rphysap:01987002205027900

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References

This article has been cited by the following article(s):

Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

H. Hbib, O. Bonnaud, M. Gauneau, et al.
Thin Solid Films 310 (1-2) 1 (1997)
https://doi.org/10.1016/S0040-6090(97)00324-6