Numéro |
Rev. Phys. Appl. (Paris)
Volume 12, Numéro 2, février 1977
|
|
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Page(s) | 205 - 210 | |
DOI | https://doi.org/10.1051/rphysap:01977001202020500 |
Rev. Phys. Appl. (Paris) 12, 205-210 (1977)
DOI: 10.1051/rphysap:01977001202020500
David Packard Professor of Electrical Engineering, Departments of Materials Science and Electrical Engineering, University of Southern California, Los Angeles, California 90007, U. S. A.
0130R - Reviews and tutorial papers: resource letters.
6170B - Interstitials and vacancies.
7155F - Impurity and defect levels in tetrahedrally bonded nonmetals.
7280E - Electrical conductivity of III V and II VI semiconductors.
2520D - II VI and III V semiconductors.
Key words
cadmium compounds -- defect electron energy states -- II VI semiconductors -- point defects -- reviews -- CdTe -- defect structure -- high resistivity material -- review -- II VI semiconductor -- donor levels -- acceptor levels
DOI: 10.1051/rphysap:01977001202020500
The defect structure of CdTe
F.A. KrögerDavid Packard Professor of Electrical Engineering, Departments of Materials Science and Electrical Engineering, University of Southern California, Los Angeles, California 90007, U. S. A.
Abstract
Evidence concerning the defect structure of CdTe is reviewed with particular reference to the conditions producing high resistivity material.
Résumé
Dans cet article de revue on s'intéresse aux défauts physiques existant dans le tellurure de cadmium, l'accent étant mis sur les conditions produisant des cristaux de haute résistivité.
0130R - Reviews and tutorial papers: resource letters.
6170B - Interstitials and vacancies.
7155F - Impurity and defect levels in tetrahedrally bonded nonmetals.
7280E - Electrical conductivity of III V and II VI semiconductors.
2520D - II VI and III V semiconductors.
Key words
cadmium compounds -- defect electron energy states -- II VI semiconductors -- point defects -- reviews -- CdTe -- defect structure -- high resistivity material -- review -- II VI semiconductor -- donor levels -- acceptor levels