Numéro |
Rev. Phys. Appl. (Paris)
Volume 13, Numéro 2, février 1978
|
|
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Page(s) | 81 - 84 | |
DOI | https://doi.org/10.1051/rphysap:0197800130208100 |
Rev. Phys. Appl. (Paris) 13, 81-84 (1978)
DOI: 10.1051/rphysap:0197800130208100
C. N. R., Laboratorio LAMEL Via de' Castagnoli, 1-40126 Bologna, Italy
6170W - Impurity concentration, distribution, and gradients.
8160C - Surface treatment and degradation in semiconductor technology.
2520C - Elemental semiconductors.
2550 - Semiconductor device technology.
3380L - Laboratory control techniques.
Key words
automatic control -- electrolysis -- elemental semiconductors -- impurity distribution -- silicon -- surface treatment -- automated system -- controlled stripping of thin silicon layers -- electronic programmer -- electrolytic cell -- determination of impurity concentration profiles -- differential resistivity measurements
DOI: 10.1051/rphysap:0197800130208100
An automated system for the controlled stripping of thin silicon layers
R. Galloni, G. Gavina, R. Lotti et A. PiombiniC. N. R., Laboratorio LAMEL Via de' Castagnoli, 1-40126 Bologna, Italy
Abstract
An automated apparatus, consisting of an electronic programmer and a specially designed electrolitic cell, has been set up for the controlled stripping of silicon layers. The apparatus has been planned to be used in the determination of impurity concentration profiles with the technique of differentiel resistivity measurements by layer stripping.
Résumé
On décrit un appareil automatique pour le réglage d'oxydation contrôlée de couches de silicium. Cet appareil se compose d'un ordinateur électronique et d'une cellule électrolytique qui a été projetée spécialement. L'appareil a été conçu pour être employé dans la détermination du profil de concentration d'impuretés avec la mesure de la résistivité différentielle.
6170W - Impurity concentration, distribution, and gradients.
8160C - Surface treatment and degradation in semiconductor technology.
2520C - Elemental semiconductors.
2550 - Semiconductor device technology.
3380L - Laboratory control techniques.
Key words
automatic control -- electrolysis -- elemental semiconductors -- impurity distribution -- silicon -- surface treatment -- automated system -- controlled stripping of thin silicon layers -- electronic programmer -- electrolytic cell -- determination of impurity concentration profiles -- differential resistivity measurements