| Numéro |
Rev. Phys. Appl. (Paris)
Volume 23, Numéro 7, juillet 1988
|
|
|---|---|---|
| Page(s) | 1337 - 1339 | |
| DOI | https://doi.org/10.1051/rphysap:019880023070133700 | |
Rev. Phys. Appl. (Paris) 23, 1337-1339 (1988)
DOI: 10.1051/rphysap:019880023070133700
1 Laboratoire de Physique des Matériaux, CNRS Bellevue 92195 Meudon Cedex, France
2 Laboratoire de Physique des Solides CNRS Bellevue 92195 Meudon Cedex, France
6170L - Slip, creep, internal friction and other indirect evidence of dislocations.
6170Y - Interaction between different crystal structure defects.
6220F - Deformation and plasticity.
7220J - Charge carriers: generation, recombination, lifetime, and trapping semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7860H - Cathodoluminescence, ionoluminescence condensed matter.
2520D - II VI and III V semiconductors.
Key words
electron hole recombination -- gallium arsenide -- hydrogen -- III V semiconductors -- impurity dislocation interactions -- luminescence of inorganic solids -- minority carriers -- plastic deformation -- subboundary structure -- III V semiconductor -- minority carrier recombination -- dislocations -- sub boundaries -- cathodoluminescence -- extended defects -- plastic deformation -- GaAs -- GaAs:H
DOI: 10.1051/rphysap:019880023070133700
Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs
A. Djemel1, J. Castaing1 et J. Chevallier21 Laboratoire de Physique des Matériaux, CNRS Bellevue 92195 Meudon Cedex, France
2 Laboratoire de Physique des Solides CNRS Bellevue 92195 Meudon Cedex, France
Abstract
We have investigated by cathodoluminescence the influence of atomic hydrogen on the minority carrier recombination at dislocations and sub-boundaries in GaAs. These extended defects have been introduced by plastic deformation at high temperature. The recombining character of these defects is not qualitatively changed by hydrogen.
Résumé
Nous avons étudié par cathodoluminescence l'influence de l'hydrogène sur la recombinaison des porteurs minoritaires aux dislocations et aux sous-joints de grains dans GaAs. Ces défauts étendus ont été introduits par déformation plastique à chaud. Le caractère recombinant de ces défauts n'est pas qualitativement changé par l'hydrogène.
6170L - Slip, creep, internal friction and other indirect evidence of dislocations.
6170Y - Interaction between different crystal structure defects.
6220F - Deformation and plasticity.
7220J - Charge carriers: generation, recombination, lifetime, and trapping semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
7860H - Cathodoluminescence, ionoluminescence condensed matter.
2520D - II VI and III V semiconductors.
Key words
electron hole recombination -- gallium arsenide -- hydrogen -- III V semiconductors -- impurity dislocation interactions -- luminescence of inorganic solids -- minority carriers -- plastic deformation -- subboundary structure -- III V semiconductor -- minority carrier recombination -- dislocations -- sub boundaries -- cathodoluminescence -- extended defects -- plastic deformation -- GaAs -- GaAs:H