Revue de Physique Appliquée

Terahertz Beams: Generation and Spectroscopy

Stephen E. Ralph and D. Grischkowsky
MRS Proceedings 261 (1992)
DOI: 10.1557/PROC-261-89
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Magnetic Field-Assisted Radiation Enhancement From a Large Aperture Photoconductive Antenna

Jitendra Prajapati, Mrinmoy Bharadwaj, Amitabh Chatterjee and Ratnajit Bhattacharjee
IEEE Transactions on Microwave Theory and Techniques 66 (2) 678 (2018)
DOI: 10.1109/TMTT.2017.2783380
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Modelling the dynamics of a micro-cavity switch

Hasula K. Dias, Jun Jun Lim, Simeon Newton Kaunga-Nyirenda, Andrew J. Phillips and Eric C. Larkins
IET Optoelectronics 8 (2) 58 (2014)
DOI: 10.1049/iet-opt.2013.0072
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A novel crystal growth method for GaAs: The liquid encapsulated kyropoulos method

G. Jacob
Journal of Crystal Growth 58 (2) 455 (1982)
DOI: 10.1016/0022-0248(82)90295-0
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Electron capture and emission for midgap centers

J.S. Blakemore
Journal of Physics and Chemistry of Solids 49 (6) 627 (1988)
DOI: 10.1016/0022-3697(88)90193-X
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Non-radiative transitions in semiconductors

A M Stoneham
Reports on Progress in Physics 44 (12) 1251 (1981)
DOI: 10.1088/0034-4885/44/12/001
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Minority carrier capture cross section of the EL2 defect in GaAs

M. A. Zaidi, H. Maaref and J. C. Bourgoin
Applied Physics Letters 61 (20) 2452 (1992)
DOI: 10.1063/1.108149
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Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

R. V. Galatage, D. M. Zhernokletov, H. Dong, et al.
Journal of Applied Physics 116 (1) 014504 (2014)
DOI: 10.1063/1.4886715
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Energy dependence of deep level introduction in electron irradiated GaAs

D. Pons, P. M. Mooney and J. C. Bourgoin
Journal of Applied Physics 51 (4) 2038 (1980)
DOI: 10.1063/1.327923
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Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donor

Phil Won Yu
Solid State Communications 43 (12) 953 (1982)
DOI: 10.1016/0038-1098(82)90937-1
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Numerical fitting of transient decays in the high defect density limit

S. Yang and C. D. Lamp
Journal of Applied Physics 74 (11) 6636 (1993)
DOI: 10.1063/1.355105
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Simple measurement of 300 K electron capture cross section for EL2 in GaAs

D. C. Look and Z.‐Q. Fang
Journal of Applied Physics 80 (6) 3590 (1996)
DOI: 10.1063/1.363233
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Evaluation of the concentration of point defects in GaN

M. A. Reshchikov, A. Usikov, H. Helava, et al.
Scientific Reports 7 (1) (2017)
DOI: 10.1038/s41598-017-08570-1
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Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse

Minghe Wu, Xiaoming Zheng, Chengli Ruan, et al.
Journal of Applied Physics 106 (2) 023101 (2009)
DOI: 10.1063/1.3172668
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Minority‐carrier emission effect in deep level transient spectroscopy measurements on Schottky diodes

W. I. Lee and J. M. Borrego
Journal of Applied Physics 63 (11) 5357 (1988)
DOI: 10.1063/1.340352
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Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductor switch (BOSS)

D.C. Stoudt, R.P. Brinkmann, R.A. Roush, et al.
IEEE Transactions on Electron Devices 41 (6) 913 (1994)
DOI: 10.1109/16.293301
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Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels

K. Horio and Y. Fuseya
IEEE Transactions on Electron Devices 41 (8) 1340 (1994)
DOI: 10.1109/16.297727
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Modeling the effects of surface states on DLTS spectra of GaAs MESFETs

J.H. Zhao
IEEE Transactions on Electron Devices 37 (5) 1235 (1990)
DOI: 10.1109/16.108184
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Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels

K. Horio, Y. Fuseya, H. Kusuki and H. Yanai
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 10 (10) 1295 (1991)
DOI: 10.1109/43.88925
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Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's

K. Horio and K. Satoh
IEEE Transactions on Electron Devices 41 (12) 2256 (1994)
DOI: 10.1109/16.337436
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Backdating in GaAs MESFET's

C. Kocot and C.A. Stolte
IEEE Transactions on Microwave Theory and Techniques 30 (7) 963 (1982)
DOI: 10.1109/TMTT.1982.1131184
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Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs

S. Makram–Ebeid
MRS Proceedings 2 (1980)
DOI: 10.1557/PROC-2-495
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Effects of Growth Conditions on EL-2 Concentration in OMVPE- GaAs

R. Venkatasubramanian, W. I. Lee, S. K. Ghandhi and J. M. Borrego
MRS Proceedings 104 397 (1987)
DOI: 10.1557/PROC-104-397
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Circuit Analysis of Photosensitive Capacitance in Semi-Insulating GaAs

Kevin A. Boulais, Francisco Santiago, Peter L. Wick, et al.
IEEE Transactions on Electron Devices 60 (2) 793 (2013)
DOI: 10.1109/TED.2012.2235070
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Experimental evidence for a negative-Ucenter in gallium arsenide related to oxygen

H. Ch. Alt
Physical Review Letters 65 (27) 3421 (1990)
DOI: 10.1103/PhysRevLett.65.3421
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A Tentative Identification of Certain Deep Levels in GaAs and Related Compounds

Zou Yuanxi, Chou Yuanhsi, Mo Peigen, et al.
MRS Proceedings 46 (1985)
DOI: 10.1557/PROC-46-385
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An experimental study on deep level incorporation and background doping in hydride VPE GaAs

B. Diegner, H. Weinert, R. Pickenhain and W. Hörig
physica status solidi (a) 97 (1) 313 (1986)
DOI: 10.1002/pssa.2210970131
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DLTS characterization of proton implantation defects in P-type GaAs by using schottky barrier diodes

M. Nel and F. D. Auret
Radiation Effects 103 (1-4) 197 (1987)
DOI: 10.1080/00337578708221252
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NewAsGarelated center in GaAs

D. C. Look, Z-Q. Fang, J. R. Sizelove and C. E. Stutz
Physical Review Letters 70 (4) 465 (1993)
DOI: 10.1103/PhysRevLett.70.465
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Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

M. W. Gerber and R. N. Kleiman
Journal of Applied Physics 122 (9) 095705 (2017)
DOI: 10.1063/1.5001128
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Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs

Z.-Q. Fang, D. C. Reynolds, D. C. Look, et al.
Journal of Applied Physics 83 (1) 260 (1998)
DOI: 10.1063/1.366680
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Theory of scanning tunneling microscopy of defects on semiconductor surfaces

X. de la Broïse, C. Delerue, M. Lannoo, B. Grandidier and D. Stiévenard
Physical Review B 61 (3) 2138 (2000)
DOI: 10.1103/PhysRevB.61.2138
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Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAs

J. Jiménez, P. Hernández, J. A. de Saja and J. Bonnafé
Physical Review B 35 (8) 3832 (1987)
DOI: 10.1103/PhysRevB.35.3832
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Electrical and optical characterization of metastable deep-level defects in GaAs

W. R. Buchwald, G. J. Gerardi, E. H. Poindexter, et al.
Physical Review B 40 (5) 2940 (1989)
DOI: 10.1103/PhysRevB.40.2940
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Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor

S. Makram-Ebeid and M. Lannoo
Physical Review B 25 (10) 6406 (1982)
DOI: 10.1103/PhysRevB.25.6406
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Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in Semiconductors

S. Makram-Ebeid and M. Lannoo
Physical Review Letters 48 (18) 1281 (1982)
DOI: 10.1103/PhysRevLett.48.1281
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Two-dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)

Kazushige Horio
International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering 3 (3) 230 (1993)
DOI: 10.1002/mmce.4570030310
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Springer Handbook of Electronic and Photonic Materials

Mike Brozel
Springer Handbook of Electronic and Photonic Materials 499 (2006)
DOI: 10.1007/978-0-387-29185-7_23
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Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Ke Chen, Anupam Roy, Amritesh Rai, et al.
APL Materials 6 (5) 056103 (2018)
DOI: 10.1063/1.5022339
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Imperfections in III/V Materials

Maria Kaminska and Eicke R. Weber
Semiconductors and Semimetals, Imperfections in III/V Materials 38 59 (1993)
DOI: 10.1016/S0080-8784(08)62798-2
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Investigation of transient transport and recombination phenomena in semiinsulating GaAs

V. Kažukauskas and J. Vaitkus
Zeitschrift für Physik B Condensed Matter 94 (4) 401 (1994)
DOI: 10.1007/BF01317402
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An acceptorlike electron trap in GaAs related to Ni

S. Brehme and R. Pickenhain
Solid State Communications 59 (7) 469 (1986)
DOI: 10.1016/0038-1098(86)90690-3
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Native defects in gallium arsenide

J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard
Journal of Applied Physics 64 (9) R65 (1988)
DOI: 10.1063/1.341206
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Effect of potential fluctuations on the transport properties and the photoconductivity of compensated semiconductors. Application to semi‐insulating GaAs. II. Excess carrier lifetimes and photoconductivity

B. Pistoulet, P. Girard and G. Hamamdjian
Journal of Applied Physics 56 (8) 2275 (1984)
DOI: 10.1063/1.334261
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Advances in Electronics and Electron Physics Volume 61

A.G. Milnes
Advances in Electronics and Electron Physics, Advances in Electronics and Electron Physics Volume 61 61 63 (1983)
DOI: 10.1016/S0065-2539(08)60189-4
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Photovoltaic Solar Energy

Seth Hubbard
Photovoltaic Solar Energy 39 (2017)
DOI: 10.1002/9781118927496.ch5
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Effect of electric field on deep‐level transients in GaAs and GaP

S. Makram‐Ebeid
Applied Physics Letters 37 (5) 464 (1980)
DOI: 10.1063/1.91966
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Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi and T. Yamada
IEEE Transactions on Electron Devices 47 (3) 617 (2000)
DOI: 10.1109/16.824738
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Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep-Level Centers in GaAs

V. Ya. Prinz and S. N. Rechkunov
physica status solidi (b) 118 (1) 159 (1983)
DOI: 10.1002/pssb.2221180119
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Electric-Field-Enhanced Neutralization of Deep Centers in GaAs

D. G. Eshchenko, V. G. Storchak, S. P. Cottrell and E. Morenzoni
Physical Review Letters 103 (21) 216601 (2009)
DOI: 10.1103/PhysRevLett.103.216601
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Semiconductors and Semimetals

David C. Look
Semiconductors and Semimetals 19 75 (1983)
DOI: 10.1016/S0080-8784(08)60275-6
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Semiconductors and Semimetals

Pawel Trautman, Michal Baj and Jacek M. Baranowski
Semiconductors and Semimetals 54 427 (1998)
DOI: 10.1016/S0080-8784(08)60233-1
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Thermally and Optically Stimulated Luminescence

Thermally and Optically Stimulated Luminescence 371 (2011)
DOI: 10.1002/9781119993766.refs
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III-V Semiconductor Materials and Devices

D.C. REYNOLDS and D.C. LOOK
Materials Processing: Theory and Practices, III-V Semiconductor Materials and Devices 7 429 (1989)
DOI: 10.1016/B978-0-444-87074-2.50014-4
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Discovery of electron traps in lpe gaas grown from a bismuth melt

N. A. Yakusheva, V. Ya. Prinz and Yu. B. Bolkhovityanov
physica status solidi (a) 95 (1) K43 (1986)
DOI: 10.1002/pssa.2210950155
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Intrinsic densityni(T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients

J. S. Blakemore
Journal of Applied Physics 53 (1) 520 (1982)
DOI: 10.1063/1.329958
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Distortions in optical deep level transient spectroscopy on semi‐insulating GaAs with a conducting layer of finite thickness

Steven K. Brierley
Journal of Applied Physics 61 (2) 567 (1987)
DOI: 10.1063/1.338260
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Electron irradiation effects inp‐type GaAs

S. Loualiche, A. Nouailhat, G. Guillot, et al.
Journal of Applied Physics 53 (12) 8691 (1982)
DOI: 10.1063/1.330467
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III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials

Zou Yuanxi
Semiconductors and Semimetals, III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials 26 1 (1988)
DOI: 10.1016/S0080-8784(08)60119-2
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The effect of annealing treatments on defect structure and diffusion lengths in bulkn‐type GaAs

D. Wong, H. K. Kim, Z. Q. Fang, T. E. Schlesinger and A. G. Milnes
Journal of Applied Physics 66 (5) 2002 (1989)
DOI: 10.1063/1.344338
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Deep states in GaAs grown by molecular beam epitaxy

P. Blood and J. J. Harris
Journal of Applied Physics 56 (4) 993 (1984)
DOI: 10.1063/1.334040
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Internal friction and symmetry of intrinsic point defects in GaAs

D. Laszig, H. G. Brion and P. Haasen
Physical Review B 44 (8) 3695 (1991)
DOI: 10.1103/PhysRevB.44.3695
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Electrical and optical properties of MOVPE grown GaAs1−x P x

P. Omling, L. Samuelson, H. Titze and H. G. Grimmeiss
Il Nuovo Cimento D 2 (6) 1742 (1983)
DOI: 10.1007/BF02457860
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Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping

S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa and A. Uedono
Applied Physics Letters 108 (2) 021904 (2016)
DOI: 10.1063/1.4939838
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Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs

M. Kiyama, M. Tatsumi and M. Yamada
Applied Physics Letters 86 (1) 012102 (2005)
DOI: 10.1063/1.1844040
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Evaluation of a defect capture cross section for minority carriers: Application to GaAs

D. Stievenard and J. C. Bourgoin
Journal of Applied Physics 59 (3) 808 (1986)
DOI: 10.1063/1.336602
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Anomalous majority‐carrier peaks in deep level transient spectroscopy

Steven K. Brierley
Journal of Applied Physics 59 (1) 168 (1986)
DOI: 10.1063/1.336856
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Evidence for EL6 (Ec− 0.35 eV) acting as a dominant recombination center inn‐type horizontal Bridgman GaAs

Zhao‐Qiang Fang, T. E. Schlesinger and A. G. Milnes
Journal of Applied Physics 61 (11) 5047 (1987)
DOI: 10.1063/1.338327
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The impact of deep levels on the photocurrent transients in semi-insulating GaAs

M. Pavlović, B. Šantić, D. I. Desnica-Franković, et al.
Journal of Electronic Materials 32 (10) 1100 (2003)
DOI: 10.1007/s11664-003-0094-2
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2-D simulation of kink-related sidegating effects in GaAs MESFETs

Kasuoki Usami and Kazushige Horio
Solid-State Electronics 39 (12) 1737 (1996)
DOI: 10.1016/S0038-1101(96)00116-5
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Carrier trapping in ultrafast metal‐semiconductor‐metal photodetectors on InGaAs/GaAs‐on‐GaAs superlattices

J. Hugi, Y. Haddab, R. Sachot and M. Ilegems
Journal of Applied Physics 77 (4) 1785 (1995)
DOI: 10.1063/1.358875
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Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix

Wyatt H. Strong, David V. Forbes and Seth M. Hubbard
Materials Science in Semiconductor Processing 25 76 (2014)
DOI: 10.1016/j.mssp.2014.01.034
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Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate

Kazushige Horio, Kazuhiro Asada and Hisayoshi Yanai
Solid-State Electronics 34 (4) 335 (1991)
DOI: 10.1016/0038-1101(91)90162-R
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Effect of electron irradiation on the mobility profile in GaAs FATFETs

B. Szentpali, B. Kovacs, D. Huber, et al.
Solid State Communications 80 (5) 321 (1991)
DOI: 10.1016/0038-1098(91)90138-L
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Temperature Dependence of Photocurrent in Undoped Semi-Insulating Gallium Arsenide

Y. N. Mohapatra and V. Kumar
Physica Status Solidi (a) 114 (2) 659 (1989)
DOI: 10.1002/pssa.2211140229
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Manifestations of deep levels point defects in GaAs

G.M. Martin and S. Makram-Ebeid
Physica B+C 116 (1-3) 371 (1983)
DOI: 10.1016/0378-4363(83)90276-0
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Suppression of the dominant recombination center inn‐type GaAs by proximity annealing of wafers

D. Wong, T. E. Schlesinger and A. G. Milnes
Journal of Applied Physics 68 (11) 5588 (1990)
DOI: 10.1063/1.346995
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Exciton decay dynamics controlled by impurity occupation in strongly Mn-doped and partially compensated bulk GaAs

F. Münzhuber, T. Henn, T. Kiessling, et al.
Physical Review B 90 (12) (2014)
DOI: 10.1103/PhysRevB.90.125203
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Compensation mechanisms in GaAs

G. M. Martin, J. P. Farges, G. Jacob, J. P. Hallais and G. Poiblaud
Journal of Applied Physics 51 (5) 2840 (1980)
DOI: 10.1063/1.327952
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A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using schottky barrier diodes

F. D. Auret, M. Nel and H. C. Snyman
Radiation Effects 105 (3-4) 225 (1988)
DOI: 10.1080/00337578808229949
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The energy level of the EL2 defect in GaAs

J.C. Bourgoin and T. Neffati
Solid-State Electronics 43 (1) 153 (1999)
DOI: 10.1016/S0038-1101(98)00199-3
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Thermal activation energies of undoped semi-insulating LEC GaAs. Correlation of TDH and TSC results

W. Siegel, H. Witte, G. Kühnel, H. A. Schneider and T. Flande
Physica Status Solidi (a) 108 (2) 689 (1988)
DOI: 10.1002/pssa.2211080226
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Spectroscopic line fitting to DLTS data

J.E. Stannard, H.M. Day, M.L. Bark and S.H. Lee
Solid-State Electronics 24 (11) 1009 (1981)
DOI: 10.1016/0038-1101(81)90128-3
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Titanium‐related deep levels in silicon: A reexamination

D. Mathiot and S. Hocine
Journal of Applied Physics 66 (12) 5862 (1989)
DOI: 10.1063/1.343608
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Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs

R‐S. Tang, L. Sargent and J. S. Blakemore
Journal of Applied Physics 66 (1) 256 (1989)
DOI: 10.1063/1.343866
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Determination of the free energy level of deep centers, with application to GaAs

D. Pons
Applied Physics Letters 37 (4) 413 (1980)
DOI: 10.1063/1.91926
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Characterization of the EL2 center in GaAs by optical admittance spectroscopy

S. Dueñas, E. Castán, A. de Dios, et al.
Journal of Applied Physics 67 (10) 6309 (1990)
DOI: 10.1063/1.345149
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Revised role for the Poole–Frenkel effect in deep‐level characterization

W. R. Buchwald and N. M. Johnson
Journal of Applied Physics 64 (2) 958 (1988)
DOI: 10.1063/1.341907
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Kinetic simulation of charge transfer following 5.08 eV (F band) optical excitation of irradiated LiF:Mg,Ti (TLD-100): Participation of holes released via V3-VK transformation

I. Eliyahu, S. Druzhyna, Y. Horowitz, et al.
Radiation Measurements 90 27 (2016)
DOI: 10.1016/j.radmeas.2015.12.035
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Ultrafast excitonic room temperature nonlinearity in neutron irradiated quantum wells

S. Ten, J. G. Williams, P. T. Guerreiro, G. Khitrova and N. Peyghambarian
Applied Physics Letters 70 (2) 158 (1997)
DOI: 10.1063/1.118346
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Detection of deep levels and compensation mechanism in undoped, liquid‐encapsulated Czochralskin‐type GaAs

W. Siegel, G. Kühnel, H. A. Schneider, H. Witte and T. Flade
Journal of Applied Physics 69 (4) 2245 (1991)
DOI: 10.1063/1.348703
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Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs

S. Kuisma, K. Saarinen, P. Hautojärvi, Z.-Q. Fang and D. Look
Journal of Applied Physics 81 (8) 3512 (1997)
DOI: 10.1063/1.364705
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Absolute measurement of effective radiative-efficiency in GaAs grown with molecular-beam-epitaxy

M. W. Gerber and R. N. Kleiman
Journal of Applied Physics 121 (22) 225702 (2017)
DOI: 10.1063/1.4984967
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Detailed electrical characterisation of the deep Cr acceptor in GaAs

G M Martin, A Mitonneau, D Pons, A Mircea and D W Woodward
Journal of Physics C: Solid State Physics 13 (20) 3855 (1980)
DOI: 10.1088/0022-3719/13/20/009
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Negative-U properties of off-centre substitutional oxygen in gallium arsenide

H Ch Alt
Semiconductor Science and Technology 6 (10B) B121 (1991)
DOI: 10.1088/0268-1242/6/10B/023
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Photo-Hall effect and photoconductivity in p-type epitaxial GaAs:Cr

B K Ridley, M C Arikan, P J Bishop, M F M Hassan and W V Machado
Journal of Physics C: Solid State Physics 15 (33) 6865 (1982)
DOI: 10.1088/0022-3719/15/33/022
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Transient decay of photoinduced current in semiconductors and heterostructures

Luis V A Scalvi and Cristina F Bueno
Journal of Physics D: Applied Physics 53 (3) 033001 (2020)
DOI: 10.1088/1361-6463/ab495a
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Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

Landolt-Börnstein - Group III Condensed Matter, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. b 1 (2003)
DOI: 10.1007/10860305_97
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Cathodoluminescence induced in oxides by high-energy electrons: Effects of beam flux, electron energy, and temperature

Jean-Marc Costantini, Tatsuhiko Ogawa, AKM Saiful I. Bhuian and Kazuhiro Yasuda
Journal of Luminescence 208 108 (2019)
DOI: 10.1016/j.jlumin.2018.12.045
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Minority carrier diffusion lengths in bulkn-type gaas

Liang Bingwen, Zou Yuanxi, Zhou Binglin and A. G. Milnes
Journal of Electronic Materials 16 (3) 177 (1987)
DOI: 10.1007/BF02655483
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Interpretation of luminescence in GaAs : Cr : 0.839 eV and 0.574 eV lines

G. Picoli, B. Deveaud and D. Galland
Journal de Physique 42 (1) 133 (1981)
DOI: 10.1051/jphys:01981004201013300
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Detailed optical characterization of the deep cr level in gaas

A. Nouailhat, F. Litty, S. Loualiche, P. Leyral and G. Guillot
Journal de Physique 43 (5) 815 (1982)
DOI: 10.1051/jphys:01982004305081500
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EL2 distribution in LEC GaAs ingots and wafers

M. Bonnet, N. Visentin and B. Gouteraux
Revue de Physique Appliquée 23 (5) 739 (1988)
DOI: 10.1051/rphysap:01988002305073900
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On the atomic configuration of EL2

D. Stievenard and H.J. von Bardeleben
Revue de Physique Appliquée 23 (5) 803 (1988)
DOI: 10.1051/rphysap:01988002305080300
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Semi-Insulating III–V Materials

J. S. Blakemore
Semi-Insulating III–V Materials 29 (1980)
DOI: 10.1007/978-1-4684-9193-7_3
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Semi-Insulating III–V Materials

A. Goltzene, C. Schwab and G. M. Martin
Semi-Insulating III–V Materials 221 (1980)
DOI: 10.1007/978-1-4684-9193-7_27
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Semi-Insulating III–V Materials

B. Deveaud and B. Toulouse
Semi-Insulating III–V Materials 241 (1980)
DOI: 10.1007/978-1-4684-9193-7_30
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Semi-Insulating III–V Materials

G. M. Martin
Semi-Insulating III–V Materials 13 (1980)
DOI: 10.1007/978-1-4684-9193-7_2
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Study of electronic properties on the n-GaN (0001) surface with points defects

Lei Liu, Feifei Lu and Jian Tian
Applied Physics A 125 (12) (2019)
DOI: 10.1007/s00339-019-3142-3
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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Wondwosen Metaferia, Kevin L. Schulte, John Simon, Steve Johnston and Aaron J. Ptak
Nature Communications 10 (1) (2019)
DOI: 10.1038/s41467-019-11341-3
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Electron and hole capture cross-sections at deep centers in gallium arsenide

Citations de cet article :

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Numerical fitting of transient decays in the high defect density limit

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