Etude de l'influence de l'épaisseur de la région n pour l'optimisation de la tenue en tension des structures p-n-n+ p. 473 V. Boisson, M. Le Helley and J.P. Chante DOI: https://doi.org/10.1051/rphysap:01987002207047300 PDF (627.1 KB)References
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Static response of miniature capacitive pressure sensors with square or rectangular silicon diaphragm p. 505 G. Blasquez, Y. Naciri, P. Blondel, N. Ben Moussa and P. Pons DOI: https://doi.org/10.1051/rphysap:01987002207050500 PDF (748.6 KB)References
Silicium polycristallin p. 511 Bernard Equer, Pierre Pinard, André Rocher and Michel Rodot DOI: https://doi.org/10.1051/rphysap:01987002207051100 PDF (166.5 KB)
Polycrystalline silicon p. 513 Bernard Equer, Pierre Pinard, André Rocher and Michel Rodot DOI: https://doi.org/10.1051/rphysap:01987002207051300 PDF (136.9 KB)
Czochralski growth of silicon bicrystals p. 515 J.J. Aubert and J.J. Bacmann DOI: https://doi.org/10.1051/rphysap:01987002207051500 PDF (760.9 KB)References
Etude de la solidification directionnelle en creuset du silicium en vue d'un usage solaire p. 519 G. Revel, J.-L. Pastol, D. Hania and Nguyen Dinh Huynh DOI: https://doi.org/10.1051/rphysap:01987002207051900 PDF (1.723 MB)References
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Le silicium polycristallin Polix : élaboration, propriétés et performances p. 535 G. Nouet, P. Lay and J.L. Chermant DOI: https://doi.org/10.1051/rphysap:01987002207053500 PDF (2.061 MB)References
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Electronic properties of grain boundaries in semiconductors p. 579 J.C. Bourgoin, A. Mauger and M. Lannoo DOI: https://doi.org/10.1051/rphysap:01987002207057900 PDF (870.0 KB)References
Les propriétés électriques de la macle Σ = 25 du silicium et leur évolution en fonction de traitements de recuit p. 585 A. Broniatowski DOI: https://doi.org/10.1051/rphysap:01987002207058500 PDF (936.0 KB)References
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On the origin of the electrical activity in silicon grain boundaries p. 613 J.-L. Maurice DOI: https://doi.org/10.1051/rphysap:01987002207061300 PDF (1.821 MB)References
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Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon p. 631 S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci and P.L. Fabbri DOI: https://doi.org/10.1051/rphysap:01987002207063100 PDF (933.9 KB)References
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Improvement of electron diffusion lengths in polycrystalline silicon wafers by aluminium p. 645 S. Martinuzzi, H. Poitevin, M. Zehaf and C. Zurletto DOI: https://doi.org/10.1051/rphysap:01987002207064500 PDF (728.4 KB)References
Hydrogen ion passivation of multicrystalline silicon solar cells p. 649 J.C. Muller, A. Barhdadi, Y. Ababou and P. Siffert DOI: https://doi.org/10.1051/rphysap:01987002207064900 PDF (937.8 KB)References
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Microstructure effect on the HNO3-HF etching of LPCVD boron-doped polycrystalline silicon p. 671 F. Mansour-Bahloul, D. Bielle-Daspet and A. Peyrelavigne DOI: https://doi.org/10.1051/rphysap:01987002207067100 PDF (993.7 KB)References
3D-Modelling of polycrystalline silicon solar cells p. 677 J. Dugas and J. Oualid DOI: https://doi.org/10.1051/rphysap:01987002207067700 PDF (1.273 MB)References
Thin film solar cells using impure polycrystalline silicon p. 687 M. Rodot, M. Barbe, J.E. Bouree, V. Perraki, G. Revel, R. Kishore, J.L. Pastol, R. Mertens, M. Caymax and M. Eyckmans DOI: https://doi.org/10.1051/rphysap:01987002207068700 PDF (1.302 MB)References
Polyx multicrystalline silicon solar cells processed by PF+ 5 unanalysed ion implantation and rapid thermal annealing p. 695 W.O. Adekoya, Li Jin Chai, M. Ajaka, J.C. Muller and P. Siffert DOI: https://doi.org/10.1051/rphysap:01987002207069500 PDF (913.8 KB)References
